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3EZ9.1D10

Description
Zener Diode, 9.1V V(Z), 10%, 3W,
CategoryDiscrete semiconductor    diode   
File Size36KB,3 Pages
ManufacturerSynSemi
Websitehttp://www.synsemi.com/
Download Datasheet Parametric View All

3EZ9.1D10 Overview

Zener Diode, 9.1V V(Z), 10%, 3W,

3EZ9.1D10 Parametric

Parameter NameAttribute value
MakerSynSemi
Reach Compliance Codeunknown
ConfigurationSINGLE
Diode typeZENER DIODE
Maximum dynamic impedance2.5 Ω
Number of components1
Maximum operating temperature175 °C
Maximum power dissipation3 W
Nominal reference voltage9.1 V
surface mountNO
Maximum voltage tolerance10%
Working test current82 mA
Base Number Matches1
3EZ Series
V
Z
: 3.9 - 400 Volts
P
D
: 3 Watts
FEATURES :
*
*
*
*
Complete Voltage Range 3.9 to 400 Volts
High peak reverse power dissipation
High reliability
Low leakage current
SILICON ZENER DIODES
DO - 41
0.107 (2.7)
0.080 (2.0)
1.00 (25.4)
MIN.
0.205 (5.2)
0.166 (4.2)
MECHANICAL DATA
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.339 gram
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS
Rating at 25
°
C ambient temperature unless otherwise specified
Rating
DC Power Dissipation at T
L
= 75
°C
(Note1)
Maximum Forward Voltage at I
F
= 200 mA
Maximum Thermal Resistance Junction to Ambient Air (Note2)
Junction Temperature Range
Storage Temperature Range
Symbol
P
D
V
F
RθJA
T
J
Ts
Value
3.0
1.5
60
- 55 to + 175
- 55 to + 175
Unit
W
V
K/W
°C
°C
Note :
(1) T
L
= Lead temperature at 3/8 " (9.5mm) from body
(2) Valid provided that leads are kept at ambient temperature at a distance of 10 mm from case.
Fig. 1 Power Temperature Derating Curve
P
D
, MAXIMUM DISSIPATION
(WATTS)
5
4
3
2
L = 1"
1
0
0
40
80
120
160
200
L = 3/8"
L = LEAD LENGTH
TO HEAT SINK
L = 1/8"
T
L,
LEAD TEMPERATURE (
°
C)
Page 1 of 3
Rev. 01 : January 10, 2004
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