KTC3879
Elektronische Bauelemente
0.05A , 35V
NPN Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
High Power Gain
A
L
3
SOT-23
3
APPLICATIONS
High Frequency Application
HF, VHF Band Amplifier Application
1
Top View
2
C B
1
2
K
E
D
CLASSIFICATION OF h
FE
Product-Rank
Range
Marking Code
KTC3879-R
40~80
RR
KTC3879-O
70~140
RO
KTC3879-Y
120~240
RY
F
REF.
A
B
C
D
E
F
G
Millimeter
Min.
Max.
2.80
3.04
2.10
2.55
1.20
1.40
0.89
1.15
1.78
2.04
0.30
0.50
H
REF.
G
H
J
K
L
J
Millimeter
Min.
Max.
0.09
0.18
0.45
0.60
0.08
0.177
0.6 REF.
0.89
1.02
PACKAGE INFORMATION
Package
SOT-23
MPQ
3K
Leader Size
7 inch
Collector
3
1
Base
2
Emitter
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance From Junction
To Ambient
Junction, Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
J
, T
STG
Ratings
35
30
4
50
150
833
150, -55~150
Unit
V
V
V
mA
mW
° /W
C
°
C
ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise specified)
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Transition Frequency
http://www.SeCoSGmbH.com/
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
Min.
35
30
4
-
-
-
40
-
-
100
Typ.
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
0.1
0.2
1
240
0.4
1
-
Unit
V
V
V
µA
µA
µA
V
V
MHz
Test Conditions
I
C
=100µA, I
E
=0
I
C
=100µA, I
B
=0
I
E
=100µA, I
C
=0
V
CB
=30V, I
E
=0
V
CE
=25V, I
B
=0
V
EB
=4V, I
C
=0
V
CE
=12V, I
C
=2mA
I
C
=10mA, I
B
=1mA
I
C
=10mA, I
B
=1mA
V
CE
=10V, I
C
=1mA
Any changes of specification will not be informed individually.
15-Jul-2011 Rev. A
Page 1 of 1
Microcontroller MCU
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