Switching Diodes
MA3S132A
(MA132A)
, MA3S132K
(MA132K)
Silicon epitaxial planar type
0.28
±0.05
Unit: mm
0.12
+0.05
–0.02
3
1.60
±0.05
(0.44)
3˚
(0.44)
0.60
+0.05
–0.03
For switching circuits
■
Features
•
Short reverse recovery time t
rr
•
Small terminal capacitance C
t
•
Allowing high-density mounting
1 2
(0.51)
(0.80) (0.80)
1.60
+0.05
–0.03
3˚
0.80
±0.05
(0.80)
0.28
±0.05
(0.51)
0 to 0.1
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Reverse voltage
Maximum peak reverse voltage
Forward current
Peak forward current
Non-repetitive peak forward
surge current
*
Junction temperature
Storage temperature
Note) *: t
=
1 s
Symbol
V
R
V
RM
I
F
I
FM
I
FSM
T
j
T
stg
Rating
80
80
100
225
500
150
−55
to
+150
Unit
V
V
mA
mA
mA
°C
°C
EIAJ: SC-81
SSMini3-F2 Package
MA3S132A
1 Cathode
2 N.C.
3 Anode
MA3S132K
Anode
N.C.
Cathode
Marking Symbol:
•
MA3S132A: MB
•
MA3S132K: MI
Internal Connection
3
3
1
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Forward voltage
Reverse voltage
Reverse current
Terminal capacitance
Reverse recovery time
*
A
2
1
K
2
Symbol
V
F
V
R
I
R
C
t
t
rr
I
R
=
100
µA
V
R
=
75 V
Conditions
I
F
=
100 mA
Min
Typ
Max
1.2
(0.15)
80
100
2
3
V
R
=
0 V, f
=
1 MHz
I
F
=
10 mA, V
R
=
6 V
I
rr
=
0.1 I
R
, R
L
=
100
Ω
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz.
3. *: t
rr
measurement circuit
Bias Application Unit (N-50BU)
t
r
10%
Input Pulse
t
p
t
I
F
t
rr
t
I
rr
=
0.1 I
R
I
F
=
10 mA
V
R
=
6 V
R
L
=
100
Ω
Output Pulse
A
V
R
Pulse Generator
(PG-10N)
R
s
=
50
Ω
Wave Form Analyzer
(SAS-8130)
R
i
=
50
Ω
90%
t
p
=
2
µs
t
r
=
0.35 ns
δ =
0.05
Note) The part numbers in the parenthesis show conventional part number.
Publication date: March 2004
SKF00023BED
(0.375)
0.88
+0.05
–0.03
Unit
V
V
nA
pF
ns
1
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of
the products or technical information described in this material and controlled under the "Foreign Exchange
and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and
applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical
information as described in this material.
(4) The products described in this material are intended to be used for standard applications or general elec-
tronic equipment (such as office equipment, communications equipment, measuring instruments and house-
hold appliances).
Consult our sales staff in advance for information on the following applications:
•
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combus-
tion equipment, life support systems and safety devices) in which exceptional quality and reliability are
required, or if the failure or malfunction of the products may directly jeopardize life or harm the human
body.
•
Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without notice for
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifica-
tions satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat-
ing, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not
be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such
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