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MA3S132K

Description
Silicon epitaxial planar type
CategoryDiscrete semiconductor    diode   
File Size82KB,4 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
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MA3S132K Overview

Silicon epitaxial planar type

MA3S132K Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPanasonic
Parts packaging codeSC-81
package instructionR-PDSO-F3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.2 V
JESD-30 codeR-PDSO-F3
JESD-609 codee6
Humidity sensitivity level1
Maximum non-repetitive peak forward current0.5 A
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Maximum output current0.1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage80 V
Maximum reverse recovery time0.003 µs
surface mountYES
Terminal surfaceTin/Bismuth (Sn/Bi)
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Switching Diodes
MA3S132A
(MA132A)
, MA3S132K
(MA132K)
Silicon epitaxial planar type
0.28
±0.05
Unit: mm
0.12
+0.05
–0.02
3
1.60
±0.05
(0.44)
(0.44)
0.60
+0.05
–0.03
For switching circuits
Features
Short reverse recovery time t
rr
Small terminal capacitance C
t
Allowing high-density mounting
1 2
(0.51)
(0.80) (0.80)
1.60
+0.05
–0.03
0.80
±0.05
(0.80)
0.28
±0.05
(0.51)
0 to 0.1
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Reverse voltage
Maximum peak reverse voltage
Forward current
Peak forward current
Non-repetitive peak forward
surge current
*
Junction temperature
Storage temperature
Note) *: t
=
1 s
Symbol
V
R
V
RM
I
F
I
FM
I
FSM
T
j
T
stg
Rating
80
80
100
225
500
150
−55
to
+150
Unit
V
V
mA
mA
mA
°C
°C
EIAJ: SC-81
SSMini3-F2 Package
MA3S132A
1 Cathode
2 N.C.
3 Anode
MA3S132K
Anode
N.C.
Cathode
Marking Symbol:
MA3S132A: MB
MA3S132K: MI
Internal Connection
3
3
1
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Forward voltage
Reverse voltage
Reverse current
Terminal capacitance
Reverse recovery time
*
A
2
1
K
2
Symbol
V
F
V
R
I
R
C
t
t
rr
I
R
=
100
µA
V
R
=
75 V
Conditions
I
F
=
100 mA
Min
Typ
Max
1.2
(0.15)
80
100
2
3
V
R
=
0 V, f
=
1 MHz
I
F
=
10 mA, V
R
=
6 V
I
rr
=
0.1 I
R
, R
L
=
100
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz.
3. *: t
rr
measurement circuit
Bias Application Unit (N-50BU)
t
r
10%
Input Pulse
t
p
t
I
F
t
rr
t
I
rr
=
0.1 I
R
I
F
=
10 mA
V
R
=
6 V
R
L
=
100
Output Pulse
A
V
R
Pulse Generator
(PG-10N)
R
s
=
50
Wave Form Analyzer
(SAS-8130)
R
i
=
50
90%
t
p
=
2
µs
t
r
=
0.35 ns
δ =
0.05
Note) The part numbers in the parenthesis show conventional part number.
Publication date: March 2004
SKF00023BED
(0.375)
0.88
+0.05
–0.03
Unit
V
V
nA
pF
ns
1

MA3S132K Related Products

MA3S132K MA132K
Description Silicon epitaxial planar type Silicon epitaxial planar type
Is it Rohs certified? conform to conform to
Maker Panasonic Panasonic
Parts packaging code SC-81 SC-81
package instruction R-PDSO-F3 R-PDSO-F3
Contacts 3 3
Reach Compliance Code unknow unknow
ECCN code EAR99 EAR99
Configuration SINGLE SINGLE
Diode component materials SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE
JESD-30 code R-PDSO-F3 R-PDSO-F3
Number of components 1 1
Number of terminals 3 3
Maximum output current 0.1 A 0.1 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED 260
Certification status Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 80 V 80 V
Maximum reverse recovery time 0.003 µs 0.003 µs
surface mount YES YES
Terminal form FLAT FLAT
Terminal location DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED 10
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