Switching Diodes
MA3S132A
(MA132A)
, MA3S132K
(MA132K)
Silicon epitaxial planar type
0.28
±0.05
Unit: mm
0.12
+0.05
–0.02
3
1.60
±0.05
(0.44)
3˚
(0.44)
0.60
+0.05
–0.03
For switching circuits
■
Features
•
Short reverse recovery time t
rr
•
Small terminal capacitance C
t
•
Allowing high-density mounting
1 2
(0.51)
(0.80) (0.80)
1.60
+0.05
–0.03
3˚
0.80
±0.05
(0.80)
0.28
±0.05
(0.51)
0 to 0.1
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Reverse voltage
Maximum peak reverse voltage
Forward current
Peak forward current
Non-repetitive peak forward
surge current
*
Junction temperature
Storage temperature
Note) *: t
=
1 s
Symbol
V
R
V
RM
I
F
I
FM
I
FSM
T
j
T
stg
Rating
80
80
100
225
500
150
−55
to
+150
Unit
V
V
mA
mA
mA
°C
°C
EIAJ: SC-81
SSMini3-F2 Package
MA3S132A
1 Cathode
2 N.C.
3 Anode
MA3S132K
Anode
N.C.
Cathode
Marking Symbol:
•
MA3S132A: MB
•
MA3S132K: MI
Internal Connection
3
3
1
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Forward voltage
Reverse voltage
Reverse current
Terminal capacitance
Reverse recovery time
*
A
2
1
K
2
Symbol
V
F
V
R
I
R
C
t
t
rr
I
R
=
100
µA
V
R
=
75 V
Conditions
I
F
=
100 mA
Min
Typ
Max
1.2
(0.15)
80
100
2
3
V
R
=
0 V, f
=
1 MHz
I
F
=
10 mA, V
R
=
6 V
I
rr
=
0.1 I
R
, R
L
=
100
Ω
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz.
3. *: t
rr
measurement circuit
Bias Application Unit (N-50BU)
t
r
10%
Input Pulse
t
p
t
I
F
t
rr
t
I
rr
=
0.1 I
R
I
F
=
10 mA
V
R
=
6 V
R
L
=
100
Ω
Output Pulse
A
V
R
Pulse Generator
(PG-10N)
R
s
=
50
Ω
Wave Form Analyzer
(SAS-8130)
R
i
=
50
Ω
90%
t
p
=
2
µs
t
r
=
0.35 ns
δ =
0.05
Note) The part numbers in the parenthesis show conventional part number.
Publication date: March 2004
SKF00023BED
(0.375)
0.88
+0.05
–0.03
Unit
V
V
nA
pF
ns
1
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and semiconductors described in this material
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Consult our sales staff in advance for information on the following applications:
•
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•
Any applications other than the standard applications intended.
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2003 SEP