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1N3595DIE

Description
Rectifier Diode, 1 Element, 0.2A, 150V V(RRM), Silicon, DIE
CategoryDiscrete semiconductor    diode   
File Size62KB,3 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
Download Datasheet Parametric View All

1N3595DIE Overview

Rectifier Diode, 1 Element, 0.2A, 150V V(RRM), Silicon, DIE

1N3595DIE Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeDIE
Reach Compliance Codecompli
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-609 codee3
Number of components1
Maximum operating temperature175 °C
Maximum output current0.2 A
Peak Reflow Temperature (Celsius)NOT APPLICABLE
Maximum power dissipation0.5 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage150 V
Maximum reverse recovery time3 µs
Terminal surfaceMATTE TIN
Maximum time at peak reflow temperatureNOT APPLICABLE
Base Number Matches1
1N3595
1N3595
DO-35
Color Band Denotes Cathode
Small Signal Diode
Absolute Maximum Ratings*
Symbol
V
RRM
I
F(AV)
I
FSM
T
A
= 25°C unless otherwise noted
Parameter
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
Storage Temperature Range
Operating Junction Temperature
Value
150
200
1.0
4.0
-65 to +200
175
Units
V
mA
A
A
°C
°C
T
stg
T
J
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJA
Power Dissipation
Thermal Resistance, Junction to Ambient
Parameter
Value
500
300
Units
mW
°C/W
Electrical Characteristics
Symbol
V
R
V
F
T
A
= 25°C unless otherwise noted
Parameter
Breakdown Voltage
Forward Voltage
Test Conditions
I
R
= 100
µA
I
F
= 1.0 mA
I
F
= 5.0 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 100 mA
I
F
= 200 mA
V
R
= 125 V
V
R
= 30 V, T
A
= 125°C
V
R
= 125 V, T
A
= 125°C
V
R
= 125 V, T
A
= 150°C
V
R
= 0, f = 1.0 MHz
I
F
= 10 mA, V
R
= 3.5 V,
R
L
= 1.0 kΩ
Min
150
0.52
0.60
0.65
0.75
0.79
0.83
Max
0.68
0.75
0.80
0.88
0.92
1.00
1
0.3
0.5
3
8
3
Units
V
V
V
V
V
V
V
nA
µA
µA
µA
pF
µs
I
R
Reverse Current
C
T
t
rr
Total Capacitance
Reverse Recovery Time
2002
Fairchild Semiconductor Corporation
1N3595, Rev. A
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