ZXMN10A09K
100V N-CHANNEL ENHANCEMENT MODE MOSFET IN DPAK
SUMMARY
V
(BR)DSS
=100V : R
DS(on)
=0.085 ; I
D
=7.7A
DESCRIPTION
This new generation of Trench MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage power
management applications.
FEATURES
•
Low on-resistance
•
Fast switching speed
•
Low gate drive
•
D-Pak (T0-252) package
DPAK
APPLICATIONS
•
DC-DC Converters
•
Power management functions
•
Disconnect switches
•
Motor control
ORDERING INFORMATION
DEVICE
ZXMN10A09KTC
REEL
SIZE
13”
TAPE
WIDTH
16mm
QUANTITY PER
REEL
2,500 units
PINOUT
DEVICE MARKING
•
ZXMN
10A09K
TOP VIEW
ISSUE 6 - JANUARY 2005
1
SEMICONDUCTORS
ZXMN10A09K
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Drain-source voltage
Gate-source voltage
Continuous drain current @ V
GS
=10V; T
A
=25°C
(b)
@ V
GS
=10V; T
A
=70°C
(b)
@V
GS
=10V; T
A
=25°C
Pulsed drain current
(c)
Continuous source current (body diode)
(b)
Pulsed source current (body diode)
(c)
Power dissipation at T
A
=25°C
(a)
Linear derating factor
Power dissipation at T
A
=25°C
(b)
Linear derating factor
Power dissipation at T
A
=25°C
(d)
Linear derating factor
Operating and storage temperature range
P
D
(a)
SYMBOL
V
DSS
V
GS
I
D
LIMIT
100
±20
7.7
6.2
5
UNIT
V
V
A
A
A
A
A
A
W
mW/°C
W
mW/°C
W
mW/°C
°C
I
DM
I
S
I
SM
P
D
27
11
27
4.3
34.4
P
D
10.1
80.8
2.15
17.2
T
j
, T
stg
-55 to +150
THERMAL RESISTANCE
PARAMETER
Junction to ambient
(a)
Junction to ambient
(b)
Junction to ambient
(d)
SYMBOL
R
JA
R
JA
R
JA
VALUE
29
12.3
58
UNIT
°C/W
°C/W
°C/W
NOTES
(a) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t 10 sec.
(c) Repetitive rating 50mm x 50mm x 1.6mm FR4 PCB, D=0.02 pulse width=300 s - pulse width limited by maximum junction temperature.
(d) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
ISSUE 6 - JANUARY 2005
SEMICONDUCTORS
2
ZXMN10A09K
TYPICAL CHARACTERISTICS
ISSUE 6 - JANUARY 2005
3
SEMICONDUCTORS
ZXMN10A09K
ELECTRICAL CHARACTERISTICS
(at T
amb
= 25°C unless otherwise stated)
PARAMETER
STATIC
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage
Gate-source threshold voltage
Static drain-source on-state resistance
(1)
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
2.0
100
1
100
4.0
0.085
0.100
Forward transconductance
(1) (3)
DYNAMIC
(3)
Input capacitance
Output capacitance
Reverse transfer capacitance
SWITCHING
(2) (3)
Turn-on-delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
t
d(on)
t
r
t
d(off)
t
f
Q
g
6.8
5.3
27.5
12.3
17.2
ns
ns
ns
ns
nC
V
DS
= 50V, V
GS
= 6V
I
D
= 4.6A
V
DS
= 50V, V
GS
= 10V
I
D
= 4.6A
V
DD
= 50V, I
D
= 1A
R
G
≅6.0
, V
GS
= 10V
C
iss
C
oss
C
rss
1313
83
56
pF
pF
pF
V
DS
= 50V, V
GS
=0V
f=1MHz
g
fs
10.7
S
V
A
nA
V
I
D
= 250 A, V
GS
=0V
V
DS
= 100V, V
GS
=0V
V
GS
=±20V, V
DS
=0V
I
D
=250 A, V
DS
=V
GS
V
GS
= 10V, I
D
= 4.6A
V
GS
= 6V, I
D
= 4.2A
V
DS
= 15V, I
D
= 4.6A
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS
Total gate charge
Gate-source charge
Gate drain charge
SOURCE-DRAIN DIODE
Diode forward voltage
(1)
Reverse recovery time
(3)
Reverse recovery charge
(3)
Q
g
Q
gs
Q
gd
26
5.6
7.6
nC
nC
nC
V
SD
t
rr
Q
rr
0.85
40
62
0.95
V
ns
nC
T
j
=25°C, I
F
= 4.7A,
V
GS
=0V
T
j
=25°C, I
S
= 3A,
di/dt=100A/ s
NOTES
(1) Measured under pulsed conditions. Pulse width 300 s; duty cycle 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 6 - JANUARY 2005
SEMICONDUCTORS
4
ZXMN10A09K
TYPICAL CHARACTERISTICS
ISSUE 6 - JANUARY 2005
5
SEMICONDUCTORS
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