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BN1F4Z-P

Description
100mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size233KB,6 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
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BN1F4Z-P Overview

100mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR

BN1F4Z-P Parametric

Parameter NameAttribute value
MakerRenesas Electronics Corporation
package instructionIN-LINE, R-PSIP-T3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresBUILT-IN BIAS RESISTOR
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)200
JESD-30 codeR-PSIP-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Polarity/channel typePNP
Maximum power dissipation(Abs)0.25 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum off time (toff)6000 ns
Maximum opening time (tons)200 ns
Base Number Matches1
To our customers,
Old Company Name in Catalogs and Other Documents
On April 1
st
, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas
Electronics Corporation
took over all the business of both
companies.
Therefore, although the old company name remains in this document, it is a valid
Renesas
Electronics document. We appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1
st
, 2010
Renesas Electronics Corporation
Issued by:
Renesas Electronics Corporation
(http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.

BN1F4Z-P Related Products

BN1F4Z-P BN1F4ZK-T BN1F4Z-K BN1F4ZP-T BN1F4Z-A BN1F4Z-Q
Description 100mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR BN1F4ZK-T 100mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR BN1F4ZP-T BN1F4Z-A 100mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR
Maker Renesas Electronics Corporation Renesas Electronics Corporation Renesas Electronics Corporation Renesas Electronics Corporation Renesas Electronics Corporation Renesas Electronics Corporation
package instruction IN-LINE, R-PSIP-T3 , IN-LINE, R-PSIP-T3 , IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3
Reach Compliance Code unknown unknown unknown unknown unknown unknown
Base Number Matches 1 1 1 1 1 1
ECCN code EAR99 - EAR99 - EAR99 EAR99
Other features BUILT-IN BIAS RESISTOR - BUILT-IN BIAS RESISTOR - BUILT-IN BIAS RESISTOR BUILT-IN BIAS RESISTOR
Maximum collector current (IC) 0.1 A - 0.1 A - 0.1 A 0.1 A
Collector-emitter maximum voltage 50 V - 50 V - 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR - SINGLE WITH BUILT-IN RESISTOR - SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 200 - 300 - 100 135
JESD-30 code R-PSIP-T3 - R-PSIP-T3 - R-PSIP-T3 R-PSIP-T3
Number of components 1 - 1 - 1 1
Number of terminals 3 - 3 - 3 3
Maximum operating temperature 150 °C - 150 °C - 150 °C 150 °C
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR - RECTANGULAR RECTANGULAR
Package form IN-LINE - IN-LINE - IN-LINE IN-LINE
Polarity/channel type PNP - PNP - PNP PNP
Certification status Not Qualified - Not Qualified - Not Qualified Not Qualified
surface mount NO - NO - NO NO
Terminal form THROUGH-HOLE - THROUGH-HOLE - THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE - SINGLE - SINGLE SINGLE
transistor applications SWITCHING - SWITCHING - SWITCHING SWITCHING
Transistor component materials SILICON - SILICON - SILICON SILICON
Maximum off time (toff) 6000 ns - 6000 ns - 6000 ns 6000 ns
Maximum opening time (tons) 200 ns - 200 ns - 200 ns 200 ns
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