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BGM1013

Description
MMIC wideband amplifier
CategoryWireless rf/communication    Radio frequency and microwave   
File Size83KB,14 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Download Datasheet Parametric View All

BGM1013 Overview

MMIC wideband amplifier

BGM1013 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Codeunknow
JESD-609 codee0
Installation featuresSURFACE MOUNT
Number of functions1
Number of terminals5
Package body materialPLASTIC/EPOXY
Encapsulate equivalent codeTSSOP5/6,.08
power supply5 V
Maximum slew rate33 mA
surface mountYES
technologyBIPOLAR
Terminal surfaceTin/Lead (Sn/Pb)
BGM1013
MMIC wideband amplifier
Rev. 03 — 9 December 2004
Product data sheet
1. Product profile
1.1 General description
Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal
matching circuit in a 6-pin SOT363 SMD plastic package.
CAUTION
This device is sensitive to electrostatic discharge (ESD). Therefore care should be taken
during transport and handling.
MSC895
1.2 Features
s
s
s
s
s
s
s
s
Internally matched to 50
Good output match to 75
Very high gain; 35.5 dB at 1 GHz
Upper corner frequency at 2.1 GHz
31 dB flat gain up to 2.2 GHz application
14 dBm saturated output power at 1 GHz
High linearity (23 dBm IP3
out
and 43 dBc IM2)
40 dB isolation.
1.3 Applications
s
Low Noise Block (LNB) Intermediate Frequency (IF) amplifiers
s
Cable systems
s
General purpose.
1.4 Quick reference data
Table 1:
Symbol
V
S
I
S
|s
21
|
2
NF
P
L(sat)
Quick reference data
Parameter
DC supply voltage
DC supply current
insertion power gain
noise figure
saturated load power
f = 1 GHz
f = 1 GHz
f = 1 GHz
Conditions
RF input; AC coupled
Min
-
23
34.5
-
13.0
Typ
5
27.5
35.5
4.6
14.0
Max
6
33
36.2
4.7
-
Unit
V
mA
dB
dB
dBm
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