BLF7G20L-160P;
BLF7G20LS-160P
Power LDMOS transistor
Rev. 01 — 22 June 2010
Objective data sheet
1. Product profile
1.1 General description
160 W LDMOS power transistor for base station applications at frequencies from
1800 MHz to 2000 MHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
°
C in a common source class-AB production test circuit.
Mode of operation
CW
GSM EDGE
f
(MHz)
1805 to 1880
1805 to 1880
I
Dq
(mA)
850
850
V
DS
(V)
28
28
P
L(AV)
(W)
135
65
G
p
(dB)
17.5
18.5
η
D
(%)
57
43
ACPR
400k
(dBc)
-
−61
ACPR
600k
(dBc)
-
−74
EVM
rms
(%)
-
2.5
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low R
th
providing excellent thermal stability
Designed for broadband operation (1800 MHz to 2000 MHz)
Lower output capacitance for improved performance in Doherty applications
Designed for low-memory effects providing excellent digital pre-distortion capability
Internally matched for ease of use
Integrated ESD protection
Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC
1.3 Applications
RF power amplifiers for base stations and multi carrier applications in the 1800 MHz to
2000 MHz frequency range
NXP Semiconductors
BLF7G20L-160P; BLF7G20LS-160P
Power LDMOS transistor
2. Pinning information
Table 2.
Pin
1
2
3
4
5
Pinning
Description
drain1
drain2
gate1
gate2
source
[1]
Simplified outline
Graphic symbol
BLF7G20L-160P (SOT1121A)
1
2
1
3
5
3
4
2
sym117
5
4
BLF7G20LS-160P (SOT1121B)
1
2
3
4
5
drain1
drain2
gate1
gate2
source
[1]
1
2
1
5
3
5
4
3
4
2
sym117
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Package
Name Description
BLF7G20L-160P
-
flanged LDMOST ceramic package; 2 mounting holes;
4 leads
earless flanged LDMOST ceramic package; 4 leads
Version
SOT1121A
SOT1121B
Type number
BLF7G20LS-160P -
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
I
D
T
stg
T
j
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
Conditions
Min
-
−0.5
-
−65
-
Max
65
+13
<tbd>
+150
200
Unit
V
V
A
°C
°C
BLF7G20L-160P_7G20LS-160P
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Objective data sheet
Rev. 01 — 22 June 2010
2 of 9
NXP Semiconductors
BLF7G20L-160P; BLF7G20LS-160P
Power LDMOS transistor
5. Thermal characteristics
Table 5.
Symbol
R
th(j-c)
Thermal characteristics
Parameter
thermal resistance from junction to case
Conditions
T
case
= 80
°C;
P
L
= 100 W
Typ
Unit
0.41 K/W
6. Characteristics
Table 6.
Characteristics
T
j
= 25
°
C; per section unless otherwise specified.
Symbol Parameter
V
(BR)DSS
drain-source breakdown voltage
V
GS(th)
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance
Conditions
V
GS
= 0 V; I
D
= 0.9 mA
V
DS
= 10 V; I
D
= 90 mA
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 2.5 A
V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 3.15 A
Min Typ
65
1.5
-
14
-
-
-
-
1.9
-
-
-
0.15
Max Unit
-
2.3
2
-
200
-
V
V
μA
A
nA
S
Ω
<tbd> -
7. Test information
Table 7.
Application information
f = 1805 MHz and 1880 MHz; RF performance at V
DS
= 28 V; I
Dq
= 850 mA; T
case
= 25
°
C;
2 sections combined unless otherwise specified; in a class-AB production test circuit.
Symbol
G
p
RL
in
η
D
Parameter
power gain
input return loss
drain efficiency
Conditions
Min Typ
17.3 18.5
-
40
-
-
-
-
−15
43
−61
−74
2.5
8
Max
-
−8
-
−58
3.8
12.5
-
-
Unit
dB
dB
%
dBc
%
%
dB
%
Mode of operation: GSM EDGE; P
L(AV)
= 65 W
ACPR
400k
adjacent channel power ratio (400 kHz)
ACPR
600k
adjacent channel power ratio (600 kHz)
EVM
rms
EVM
M
G
p
η
D
RMS EDGE signal distortion error
peak EDGE signal distortion error
power gain
drain efficiency
−70.5
dBc
Mode of operation: CW; P
L(AV)
= 135 W
16.8 17.5
52
57
7.1 Ruggedness in class-AB operation
The BLF7G20L-160P and BLF7G20LS-160P are capable of withstanding a load
mismatch corresponding to VSWR = 10 : 1 through all phases under the following
conditions: V
DS
= 28 V; I
Dq
= 850 mA; P
L
= 160 W (CW); f = 1805 MHz.
BLF7G20L-160P_7G20LS-160P
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Objective data sheet
Rev. 01 — 22 June 2010
3 of 9
NXP Semiconductors
BLF7G20L-160P; BLF7G20LS-160P
Power LDMOS transistor
8. Package outline
Flanged LDMOST ceramic package; 2 mounting holes; 4 leads
D
SOT1121A
A
F
D
1
U
1
q
H
1
1
2
B
C
c
H
U
2
p
E
1
E
5
A
w
1
3
b
e
0
5
scale
A
b
3.94
3.68
c
D
D
1
e
8.89
0.10 19.61 19.66
9.27 9.27 0.89 18.92 12.57 3.12
1.45
1.1
E
E
1
F
H
H
1
p
Q
(2)
1.70
27.94
q
U
1
10 mm
A
B
4
w
2
C
Q
Dimensions
Unit
(1)
mm
U
2
w
1
w
2
max 4.75
nom
min 3.45
0.18 20.02 19.96
9.53 9.53 1.14 19.94 12.83 3.38
34.16 9.91
0.25 0.51
33.91 9.65
1.345 0.39
0.01 0.02
1.335 0.38
max 0.187 0.155 0.007 0.788 0.786
0.375 0.375 0.045 0.785 0.505 0.133 0.067
inches nom
0.35
min 0.136 0.145 0.004 0.772 0.774
0.365 0.365 0.035 0.745 0.495 0.123 0.057
Note
1. millimeter dimensions are derived from the original inch dimensions.
2. dimension is measured 0.030 inch (0.76 mm) from the body.
Outline
version
SOT1121A
References
IEC
JEDEC
JEITA
sot1121a_po
European
projection
Issue date
09-10-12
10-02-02
Fig 1.
Package outline SOT1121A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
BLF7G20L-160P_7G20LS-160P
Objective data sheet
Rev. 01 — 22 June 2010
4 of 9
NXP Semiconductors
BLF7G20L-160P; BLF7G20LS-160P
Power LDMOS transistor
Earless flanged LDMOST ceramic package; 4 leads
SOT1121B
D
A
F
5
D
1
D
U
1
H
1
1
2
w
2
D
c
H
U
2
E
1
E
3
b
e
0
Dimensions
Unit
(1)
mm
A
b
3.94
3.68
c
D
D
1
e
8.89
0.08 19.61 19.66
E
E
1
F
4
w
3
Q
5
scale
10 mm
H
H
1
Q
U
1
U
2
w
2
w
3
max 4.75
nom
min 3.45
0.18 20.02 19.96
9.53 9.53 1.14 19.94 12.83 1.70 20.70 9.91
0.51 0.25
9.27 9.27 0.89 18.92 12.57 1.45 20.45 9.65
max 0.187 0.155 0.007 0.788 0.786
0.375 0.375 0.045 0.785 0.505 0.067 0.815 0.39
inches nom
0.35
0.02 0.01
min 0.136 0.145 0.003 0.772 0.774
0.365 0.365 0.035 0.745 0.495 0.057 0.805 0.38
Note
1. millimeter dimensions are derived from the original inch dimensions.
2. dimension is measured 0.030 inch (0.76 mm) from the body.
Outline
version
SOT1121B
References
IEC
JEDEC
JEITA
European
projection
sot1121b_po
Issue date
09-10-12
09-12-14
Fig 2.
Package outline SOT1121B
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
BLF7G20L-160P_7G20LS-160P
Objective data sheet
Rev. 01 — 22 June 2010
5 of 9
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