BC849A datasheet, PDF - EEWORLD Datasheet

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BC849A: DescriptionSmall Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-236, ROHS COMPLIANT, PLASTIC PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size93KB，2 Pages; ManufacturerDIOTEC; Websitehttp://www.diotec.com/; Environmental Compliance

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BC849A Overview

Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-236, ROHS COMPLIANT, PLASTIC PACKAGE-3

BC849A Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Parts packaging code	SOT-23
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	30 V
Configuration	SINGLE
Minimum DC current gain (hFE)	110
JEDEC-95 code	TO-236
JESD-30 code	R-PDSO-G3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.31 W
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Nominal transition frequency (fT)	300 MHz
Base Number Matches	1

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BC846 ... BC850

NPN

Surface Mount General Purpose Si-Epi-Planar Transistors

Si-Epi-Planar Universaltransistoren für die Oberflächenmontage

Power dissipation – Verlustleistung

2.9

±0.1

0.4

3

1.3

1.1

NPN

250 mW

SOT-23

(TO-236)

0.01 g

Version 2011-07-07

Plastic case

Kunststoffgehäuse

±0.1

Type

Code

1

1.9

2

2.5 max

Weight approx. – Gewicht ca.

Plastic material has UL classification 94V-0

Gehäusematerial UL94V-0 klassifiziert

Standard packaging taped and reeled

Standard Lieferform gegurtet auf Rolle

Dimensions - Maße [mm]

1=B

2=E

3=C

Maximum ratings (T

A

= 25°C)

Grenzwerte (T

A

= 25°C)

BC846

BC847

BC850

45 V

50 V

6V

250 mW

1

)

100 mA

200 mA

-55...+150°C

-55…+150°C

BC848

BC849

30 V

5V

Collector-Emitter-volt. – Kollektor-Emitter-Spannung

Collector-Base-voltage – Kollektor-Basis-Spannung

Emitter-Base-voltage – Emitter-Basis-Spannung

Power dissipation – Verlustleistung

Collector current – Kollektorstrom (dc)

Peak Collector current – Kollektor-Spitzenstrom

Junction temperature – Sperrschichttemperatur

Storage temperature – Lagerungstemperatur

B open

E open

C open

V

CEO

V

CBO

V

EBO

P

tot

I

C

I

CM

T

j

T

S

65 V

80 V

Characteristics (T

j

= 25°C)

Min.

DC current gain – Kollektor-Basis-Stromverhältnis

V

CE

= 5 V, I

C

= 10 µA

Group A

Group B

Group C

Group A

Group B

Group C

h

FE

h

FE

h

FE

h

FE

h

FE

h

FE

V

CEsat

V

CEsat

V

BEsat

V

BEsat

–

110

200

420

–

Kennwerte (T

j

= 25°C)

Typ.

90

150

270

180

290

520

90 mV

200 mV

700 mV

900 mV

Max.

–

220

450

800

250 mV

600 mV

–

V

CE

= 5 V, I

C

= 2 mA

Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung

2

)

I

C

= 10 mA, I

B

= 0.5 mA

I

C

= 100 mA, I

B

= 5 mA

Base-Emitter saturation voltage – Basis-Sättigungsspannung

2

)

I

C

= 10 mA, I

B

= 0.5 mA

I

C

= 100 mA, I

B

= 5 mA

1

2

Mounted on P.C. board with 3 mm

2

copper pad at each terminal

Montage auf Leiterplatte mit 3 mm

2

Kupferbelag (Lötpad) an jedem Anschluss

Tested with pulses t

p

= 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen t

p

= 300 µs, Schaltverhältnis ≤ 2%

http://www.diotec.com/

1

BC849A Related Products

	BC849A	BC850A	BC846C
Description	Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-236, ROHS COMPLIANT, PLASTIC PACKAGE-3	Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-236, ROHS COMPLIANT, PLASTIC PACKAGE-3	Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon, TO-236, ROHS COMPLIANT, PLASTIC PACKAGE-3
Is it Rohs certified?	conform to	conform to	conform to
Parts packaging code	SOT-23	SOT-23	SOT-23
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Contacts	3	3	3
Reach Compliance Code	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99
Maximum collector current (IC)	0.1 A	0.1 A	0.1 A
Collector-emitter maximum voltage	30 V	45 V	65 V
Configuration	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	110	110	420
JEDEC-95 code	TO-236	TO-236	TO-236
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
Humidity sensitivity level	1	1	1
Number of components	1	1	1
Number of terminals	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Transistor component materials	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	300 MHz	300 MHz	300 MHz
Base Number Matches	1	1	1
Maximum power dissipation(Abs)	0.31 W	0.31 W	-

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