FLLD261D87Z datasheet, PDF - EEWORLD Datasheet

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FLLD261D87Z: DescriptionRectifier Diode, 2 Element, 0.25A, Silicon, TO-236AB; CategoryDiscrete semiconductor diode; File Size51KB，5 Pages; ManufacturerFairchild; Websitehttp://www.fairchildsemi.com/

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FLLD261D87Z Overview

Rectifier Diode, 2 Element, 0.25A, Silicon, TO-236AB

FLLD261D87Z Parametric

Parameter Name	Attribute value
Maker	Fairchild
package instruction	R-PDSO-G3
Reach Compliance Code	unknown
ECCN code	EAR99
Configuration	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JEDEC-95 code	TO-236AB
JESD-30 code	R-PDSO-G3
Number of components	2
Number of terminals	3
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	0.25 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Maximum power dissipation	0.35 W
Certification status	Not Qualified
Maximum reverse recovery time	0.4 µs
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Base Number Matches	1

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FLLD261

HIGH CONDUCTANCE LOW LEAKAGE DIODE

. . . .350 mW @ T

= 25 Deg C

. . . .200 V (M

) @ I

= 5 uA

ABSOLUTE MAXIMUM RATINGS

(NOTE 1)

TEMPERATURES

Storage Temperature

Operating Junction Temperature

-55 to +150 Degrees C

PACKAGE

TO-236AB (Low)

P8A

CONNECTION DIAGRAMS

POWER DISSIPATION

(NOTES 2 & 3)

Total Device Dissipation at TA = 25 Deg C

Derating Factor per Degree C

350 mW

2.8 mW

VOLTAGES & CURRENTS

WIV

Working Inverse Voltage

Average Rectified Current

DC Forward Current

Recurrent Peak Forward Current

if (surge) Peak Forward Surge Current

Pulse width = 1 second

Pulse width = 1 microsec

100 V

250 mA

600 mA

700 mA

1.0 A

3.0 A

ELECTRICAL CHARACTERISTICS

(25 Degrees C Ambient Temperature unless otherwise stated)

SYM

CHARACTERISTICS

Breakdown Voltage

Reverse Voltage Leakage Current

Forward Voltage

Diode Capacitance

Reverse Recovery Time

Forward Recovery Time

Peak Forward Voltage

MIN

200

MAX

UNITS

TEST CONDITIONS

5.0 uA

= 150 Deg C

5.0

1.40

4.0

400

0.9

Typ

= 100 V

200 mA

1.0 V

f = 1.0 MH

= I

= 50 to 400 mA

= 10% I

= 100 ohms

10 mA

Rise Time = 5 ns +/-20%

NOTES:

1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

FLLD261D87Z Related Products

	FLLD261D87Z	FLLD261S62Z	FLLD261L99Z
Description	Rectifier Diode, 2 Element, 0.25A, Silicon, TO-236AB	Rectifier Diode, 2 Element, 0.25A, Silicon, TO-236AB	Rectifier Diode, 2 Element, 0.25A, Silicon, TO-236AB
Maker	Fairchild	Fairchild	Fairchild
package instruction	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
Reach Compliance Code	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99
Configuration	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode component materials	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
JEDEC-95 code	TO-236AB	TO-236AB	TO-236AB
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
Number of components	2	2	2
Number of terminals	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C
Maximum output current	0.25 A	0.25 A	0.25 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Maximum power dissipation	0.35 W	0.35 W	0.35 W
Certification status	Not Qualified	Not Qualified	Not Qualified
Maximum reverse recovery time	0.4 µs	0.4 µs	0.4 µs
surface mount	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL
Base Number Matches	1	1	1

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