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5SNA1600N170100

Description
Insulated Gate Bipolar Transistor, 1600A I(C), 1700V V(BR)CES, N-Channel, HIPAK-7
CategoryDiscrete semiconductor    The transistor   
File Size319KB,9 Pages
ManufacturerABB
Websitehttp://www.abb.com/
Download Datasheet Parametric View All

5SNA1600N170100 Overview

Insulated Gate Bipolar Transistor, 1600A I(C), 1700V V(BR)CES, N-Channel, HIPAK-7

5SNA1600N170100 Parametric

Parameter NameAttribute value
package instructionFLANGE MOUNT, R-XUFM-X7
Contacts7
Reach Compliance Codecompliant
Shell connectionISOLATED
Maximum collector current (IC)1600 A
Collector-emitter maximum voltage1700 V
ConfigurationCOMPLEX
JESD-30 codeR-XUFM-X7
Number of components2
Number of terminals7
Maximum operating temperature125 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Transistor component materialsSILICON
Nominal off time (toff)1310 ns
Nominal on time (ton)490 ns
Base Number Matches1
V
CE
I
C
=
=
1700 V
1600 A
ABB HiPak
TM
IGBT Module
5SNA 1600N170100
Doc. No. 5SYA1564-01 Oct 06
Low-loss, rugged SPT chip-set
Smooth switching SPT chip-set for
good EMC
Industry standard package
High power density
AlSiC base-plate for high power
cycling capability
AlN substrate for low thermal
resistance
Maximum rated values
Parameter
Collector-emitter voltage
DC collector current
Peak collector current
Gate-emitter voltage
Total power dissipation
DC forward current
Peak forward current
Surge current
IGBT short circuit SOA
Isolation voltage
Junction temperature
Junction operating temperature
Case temperature
Storage temperature
Mounting torques
1)
2)
2)
1)
Symbol
V
CES
I
C
I
CM
V
GES
P
tot
I
F
I
FRM
I
FSM
t
psc
V
isol
T
vj
T
vj(op)
T
c
T
stg
M
s
M
t1
M
t2
Conditions
V
GE
= 0 V, T
vj
25 °C
T
c
= 80 °C
t
p
= 1 ms, T
c
= 80 °C
min
max
1700
1600
3200
Unit
V
A
A
V
W
A
A
A
µs
V
°C
°C
°C
°C
Nm
-20
T
c
= 25 °C, per switch (IGBT)
20
9100
1600
3200
V
R
= 0 V, T
vj
= 125 °C,
t
p
= 10 ms, half-sinewave
V
CC
= 1200 V, V
CEM CHIP
1700 V
V
GE
15 V, T
vj
125 °C
1 min, f = 50 Hz
-40
-40
-40
Base-heatsink, M6 screws
Main terminals, M8 screws
Auxiliary terminals, M4 screws
4
8
2
13200
10
4000
150
125
125
125
6
10
3
Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747
For detailed mounting instructions refer to ABB document no. 5SYA 2039 - 01
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
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