5A, 150V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | Renesas Electronics Corporation |
| Reach Compliance Code | not_compliant |
| ECCN code | EAR99 |
| Configuration | Single |
| Maximum drain current (Abs) (ID) | 5 A |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-609 code | e0 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Polarity/channel type | N-CHANNEL |
| Maximum power dissipation(Abs) | 40 W |
| surface mount | NO |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Base Number Matches | 1 |
| IRF621R | IRF622R | IRF620R | IRF623R | |
|---|---|---|---|---|
| Description | 5A, 150V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | 4A, 200V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | 5A, 200V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | 4A, 150V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible |
| Reach Compliance Code | not_compliant | not_compliant | not_compliant | _compli |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 |
| Configuration | Single | Single | Single | Single |
| Maximum drain current (Abs) (ID) | 5 A | 4 A | 5 A | 4 A |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-609 code | e0 | e0 | e0 | e0 |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C | 150 °C | 150 °C | 150 °C |
| Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| Maximum power dissipation(Abs) | 40 W | 40 W | 40 W | 40 W |
| surface mount | NO | NO | NO | NO |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Maker | Renesas Electronics Corporation | Renesas Electronics Corporation | - | Renesas Electronics Corporation |
| Base Number Matches | 1 | 1 | 1 | - |