IRF622R datasheet, PDF - EEWORLD Datasheet

IRF622R: Description4A, 200V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB; CategoryDiscrete semiconductor The transistor; File Size177KB，5 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/

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IRF622R Overview

4A, 200V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Renesas Electronics Corporation
Reach Compliance Code	not_compliant
ECCN code	EAR99
Configuration	Single
Maximum drain current (Abs) (ID)	4 A
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-609 code	e0
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	40 W
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Base Number Matches	1

	IRF622R	IRF621R	IRF620R	IRF623R
Description	4A, 200V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	5A, 150V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	5A, 200V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	4A, 150V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible
Reach Compliance Code	not_compliant	not_compliant	not_compliant	_compli
ECCN code	EAR99	EAR99	EAR99	EAR99
Configuration	Single	Single	Single	Single
Maximum drain current (Abs) (ID)	4 A	5 A	5 A	4 A
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-609 code	e0	e0	e0	e0
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	40 W	40 W	40 W	40 W
surface mount	NO	NO	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Maker	Renesas Electronics Corporation	Renesas Electronics Corporation	-	Renesas Electronics Corporation
Base Number Matches	1	1	1	-

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