IGP03N120H2,
IGW03N120H2
HighSpeed 2-Technology
•
Designed for:
- SMPS
- Lamp Ballast
- ZVS-Converter
- optimised for soft-switching / resonant topologies
2 generation HighSpeed-Technology
for 1200V applications offers:
- loss reduction in resonant circuits
- temperature stable behavior
- parallel switching capability
- tight parameter distribution
-
E
off
optimized for
I
C
=3A
nd
IGB03N120H2
C
G
E
•
P-TO-220-3-1
(TO-220AB)
P-TO-263-3-2 (D²-PAK)
(TO-263AB)
P-TO-247-3-1
(TO-247AC)
•
Complete product spectrum and PSpice Models :
http://www.infineon.com/igbt/
Type
IGW03N120H2
IGP03N120H2
IGB03N120H2
Maximum Ratings
Parameter
Collector-emitter voltage
Triangular collector current
T
C
= 25°C,
f
= 140kHz
T
C
= 100°C,
f
= 140kHz
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area
V
CE
≤
1200V,
T
j
≤
150°C
Gate-emitter voltage
Power dissipation
T
C
= 25°C
Operating junction and storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
T
j
,
T
stg
-
-40...+150
260
225 (for SMD)
°C
V
GE
P
tot
±20
62.5
V
W
I
Cpuls
-
Symbol
V
CE
I
C
9.6
3.9
9.9
9.9
Value
1200
Unit
V
A
V
CE
1200V
1200V
1200V
I
C
3A
3A
3A
E
off
0.15mJ
0.15mJ
0.15mJ
T
j
150°C
150°C
150°C
Package
P-TO-247
P-TO-220-3-1
P-TO-263 (D
2
PAK)
Ordering Code
Q67040-S4596
Q67040-S4599
Q67040-S4598
Power Semiconductors
1
Rev. 2, Mar-04
IGP03N120H2,
IGW03N120H2
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Thermal resistance,
junction – ambient
SMD version, device on PCB
1)
R
thJA
R
thJA
P-TO-220-3-1
P-TO-247-3-1
P-TO-263 (D
2
PAK)
R
thJC
Symbol
Conditions
IGB03N120H2
Max. Value
2.0
62
40
Unit
K/W
Electrical Characteristic,
at
T
j
= 25
°C,
unless otherwise specified
Parameter
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
V
( B R ) C E S
V
G E
= 0V,
I
C
= 30 0µA
V
CE(sat)
V
G E
= 15V,
I
C
= 3A
T
j
= 25° C
T
j
= 15 0° C
V
G E
= 10V,
I
C
= 3A ,
T
j
= 25° C
Gate-emitter threshold voltage
Zero gate voltage collector current
V
GE(th)
I
CES
I
C
= 90µA ,V
C E
=V
G E
V
C E
= 1200V,
V
G E
= 0V
T
j
= 25° C
T
j
= 15 0° C
Gate-emitter leakage current
Transconductance
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from case
C
iss
C
oss
C
rss
Q
Gate
L
E
V
C E
= 25V,
V
G E
= 0V,
f=
1 M Hz
V
C C
= 9 60V,
I
C
= 3A
V
G E
= 1 5V
P -T O - 2 20- 3- 1
P-TO-247-3-1
-
7
13
-
nH
-
-
-
-
205
24
7
22
-
-
-
-
nC
pF
I
GES
g
fs
V
C E
= 0V ,V
G E
= 2 0V
V
C E
= 20V,
I
C
= 3A
-
-
-
-
-
-
-
2
20
80
100
-
nA
S
-
-
-
2.1
2.2
2.5
2.4
3
2.8
-
-
3.9
µA
1200
-
-
V
Symbol
Conditions
Value
min.
Typ.
max.
Unit
1)
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
2
(one layer, 70µm thick) copper area for
collector connection. PCB is vertical without blown air.
2
Rev. 2, Mar-04
Power Semiconductors
IGP03N120H2,
IGW03N120H2
Switching Characteristic, Inductive Load,
at
T
j
=25
°C
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
j
= 25° C,
V
C C
= 8 00V,
I
C
= 3A ,
V
G E
= 1 5V/ 0 V,
R
G
= 8 2Ω ,
L
σ
2 )
= 180nH,
C
σ
2 )
= 4 0 pF
Energy losses include
“tail” and diode
3)
reverse recovery.
-
-
-
-
-
-
-
Symbol
Conditions
IGB03N120H2
Value
min.
typ.
9.2
5.2
281
29
0.14
0.15
0.29
max.
-
-
-
-
-
-
-
Unit
ns
mJ
Switching Characteristic, Inductive Load,
at
T
j
=150
°C
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
j
= 15 0° C
V
C C
= 8 00V,
I
C
= 3A ,
V
G E
= 1 5V/ 0 V,
R
G
= 8 2Ω ,
L
σ
2 )
= 180nH,
C
σ
2 )
= 4 0 pF
Energy losses include
“tail” and diode
3)
reverse recovery.
-
-
-
-
-
-
-
9.4
6.7
340
63
0.22
0.26
0.48
-
-
-
-
-
-
-
mJ
ns
Symbol
Conditions
Value
min.
typ.
max.
Unit
Switching Energy ZVT, Inductive Load
Parameter
IGBT Characteristic
Turn-off energy
E
off
V
C C
= 8 00V,
I
C
= 3A ,
V
G E
= 1 5V/ 0 V,
R
G
= 8 2Ω ,
C
r 2 )
= 4 nF
T
j
= 25° C
T
j
= 15 0° C
-
-
0.05
0.09
-
-
mJ
Symbol
Conditions
Value
min.
typ.
max.
Unit
2)
3)
Leakage inductance L
σ
and stray capacity C
σ
due to dynamic test circuit in figure E
Commutation diode from device IKP03N120H2
3
Rev. 2, Mar-04
Power Semiconductors
IGP03N120H2,
IGW03N120H2
IGB03N120H2
12A
I
c
10A
t
p
=1
µ
s
10A
5
µ
s
I
C
,
COLLECTOR CURRENT
I
C
,
COLLECTOR CURRENT
8A
T
C
=80°C
6A
T
C
=110°C
4A
10
µ
s
1A
50
µ
s
100
µ
s
0,1A
500
µ
s
DC
2A
I
c
100Hz
1kHz
10kHz
100kHz
0A
10Hz
,01A
1V
10V
100V
1000V
f,
SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(T
j
≤
150°C,
D =
0.5,
V
CE
= 800V,
V
GE
= +15V/0V,
R
G
= 82Ω)
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 2. Safe operating area
(D
=
0,
T
C
= 25°C,
T
j
≤
150°C)
12A
60W
10A
50W
I
C
,
COLLECTOR CURRENT
50°C
75°C
100°C
125°C
POWER DISSIPATION
40W
8A
30W
6A
20W
4A
P
tot
,
10W
2A
0W
25°C
0A
25°C
50°C
75°C
100°C
125°C
150°C
T
C
,
CASE TEMPERATURE
Figure 3. Power dissipation as a function
of case temperature
(T
j
≤
150°C)
T
C
,
CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
(V
GE
≤
15V,
T
j
≤
150°C)
Power Semiconductors
4
Rev. 2, Mar-04
IGP03N120H2,
IGW03N120H2
10A
10A
9A
8A
8A
V
GE
=15V
6A
12V
10V
8V
6V
IGB03N120H2
I
C
,
COLLECTOR CURRENT
I
C
,
COLLECTOR CURRENT
7A
6A
5A
4A
3A
2A
1A
V
GE
=15V
12V
10V
8V
6V
4A
2A
0A
0V
1V
2V
3V
4V
5V
0A
0V
1V
2V
3V
4V
5V
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 5. Typical output characteristics
(T
j
= 25°C)
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 6. Typical output characteristics
(T
j
= 150°C)
V
CE(sat)
,
COLLECTOR
-
EMITTER SATURATION VOLTAGE
12A
3V
10A
I
C
=6A
I
C
=3A
I
C
,
COLLECTOR CURRENT
8A
T
j
=+150°C
T
j
=+25°C
2V
6A
I
C
=1.5A
4A
1V
2A
0A
3V
5V
7V
9V
0V
-50°C
0°C
50°C
100°C
150°C
V
GE
,
GATE
-
EMITTER VOLTAGE
Figure 7. Typical transfer characteristics
(V
CE
= 20V)
T
j
,
JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(V
GE
= 15V)
Power Semiconductors
5
Rev. 2, Mar-04
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