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Q67040-S4598

Description
9.6 A, 1200 V, N-CHANNEL IGBT, TO-263AB
Categorysemiconductor    Discrete semiconductor   
File Size395KB,13 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric Compare View All

Q67040-S4598 Overview

9.6 A, 1200 V, N-CHANNEL IGBT, TO-263AB

Q67040-S4598 Parametric

Parameter NameAttribute value
Number of terminals2
Rated off time403 ns
Maximum collector current9.6 A
Maximum Collector-Emitter Voltage1200 V
Processing package descriptionROHS COMPLIANT, PLASTIC, TO-263, 3 PIN
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingMATTE Tin
Terminal locationsingle
Packaging MaterialsPlastic/Epoxy
structuresingle
Shell connectionCOLLECTOR
Number of components1
transistor applicationsPOWER control
Transistor component materialssilicon
Channel typeN channel
Transistor typeINSULATED GATE BIPOLAR
Rated on time16.1 ns
IGP03N120H2,
IGW03N120H2
HighSpeed 2-Technology
Designed for:
- SMPS
- Lamp Ballast
- ZVS-Converter
- optimised for soft-switching / resonant topologies
2 generation HighSpeed-Technology
for 1200V applications offers:
- loss reduction in resonant circuits
- temperature stable behavior
- parallel switching capability
- tight parameter distribution
-
E
off
optimized for
I
C
=3A
nd
IGB03N120H2
C
G
E
P-TO-220-3-1
(TO-220AB)
P-TO-263-3-2 (D²-PAK)
(TO-263AB)
P-TO-247-3-1
(TO-247AC)
Complete product spectrum and PSpice Models :
http://www.infineon.com/igbt/
Type
IGW03N120H2
IGP03N120H2
IGB03N120H2
Maximum Ratings
Parameter
Collector-emitter voltage
Triangular collector current
T
C
= 25°C,
f
= 140kHz
T
C
= 100°C,
f
= 140kHz
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area
V
CE
1200V,
T
j
150°C
Gate-emitter voltage
Power dissipation
T
C
= 25°C
Operating junction and storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
T
j
,
T
stg
-
-40...+150
260
225 (for SMD)
°C
V
GE
P
tot
±20
62.5
V
W
I
Cpuls
-
Symbol
V
CE
I
C
9.6
3.9
9.9
9.9
Value
1200
Unit
V
A
V
CE
1200V
1200V
1200V
I
C
3A
3A
3A
E
off
0.15mJ
0.15mJ
0.15mJ
T
j
150°C
150°C
150°C
Package
P-TO-247
P-TO-220-3-1
P-TO-263 (D
2
PAK)
Ordering Code
Q67040-S4596
Q67040-S4599
Q67040-S4598
Power Semiconductors
1
Rev. 2, Mar-04

Q67040-S4598 Related Products

Q67040-S4598 Q67040-S4596 Q67040-S4599
Description 9.6 A, 1200 V, N-CHANNEL IGBT, TO-263AB 9.6 A, 1200 V, N-CHANNEL IGBT, TO-263AB 9.6 A, 1200 V, N-CHANNEL IGBT, TO-263AB
Number of terminals 2 2 2
Rated off time 403 ns 403 ns 403 ns
Maximum collector current 9.6 A 9.6 A 9.6 A
Maximum Collector-Emitter Voltage 1200 V 1200 V 1200 V
Processing package description ROHS COMPLIANT, PLASTIC, TO-263, 3 PIN ROHS COMPLIANT, PLASTIC, TO-263, 3 PIN ROHS COMPLIANT, PLASTIC, TO-263, 3 PIN
Lead-free Yes Yes Yes
EU RoHS regulations Yes Yes Yes
state ACTIVE ACTIVE ACTIVE
packaging shape Rectangle Rectangle Rectangle
Package Size SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
surface mount Yes Yes Yes
Terminal form GULL WING GULL WING GULL WING
terminal coating MATTE Tin MATTE Tin MATTE Tin
Terminal location single single single
Packaging Materials Plastic/Epoxy Plastic/Epoxy Plastic/Epoxy
structure single single single
Shell connection COLLECTOR COLLECTOR COLLECTOR
Number of components 1 1 1
transistor applications POWER control POWER control POWER control
Transistor component materials silicon silicon silicon
Channel type N channel N channel N channel
Transistor type INSULATED GATE BIPOLAR INSULATED GATE BIPOLAR INSULATED GATE BIPOLAR
Rated on time 16.1 ns 16.1 ns 16.1 ns
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