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HGT1S14N36G3VL

Description
Insulated Gate Bipolar Transistor, 18A I(C), N-Channel, TO-262AA
CategoryDiscrete semiconductor    The transistor   
File Size119KB,6 Pages
ManufacturerHarris
Websitehttp://www.harris.com/
Download Datasheet Parametric View All

HGT1S14N36G3VL Overview

Insulated Gate Bipolar Transistor, 18A I(C), N-Channel, TO-262AA

HGT1S14N36G3VL Parametric

Parameter NameAttribute value
package instructionIN-LINE, R-PSIP-T3
Reach Compliance Codeunknown
Other featuresVOLTAGE CLAMPING
Shell connectionCOLLECTOR
Maximum collector current (IC)18 A
ConfigurationSINGLE WITH BUILT-IN DIODE AND RESISTOR
Gate emitter threshold voltage maximum2.2 V
Gate-emitter maximum voltage10 V
JEDEC-95 codeTO-262AA
JESD-30 codeR-PSIP-T3
Number of components1
Number of terminals3
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Polarity/channel typeN-CHANNEL
Maximum power consumption environment100 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsAUTOMOTIVE IGNITION
Transistor component materialsSILICON
VCEsat-Max2.2 V
Base Number Matches1
S E M I C O N D U C T O R
HGTP14N36G3VL,
HGT1S14N36G3VL,
HGT1S14N36G3VLS
14A, 360V N-Channel,
Logic Level, Voltage Clamping IGBTs
Packages
JEDEC TO-220AB
EMITTER
COLLECTOR
GATE
COLLECTOR
(FLANGE)
June 1995
Features
• Logic Level Gate Drive
• Internal Voltage Clamp
• ESD Gate Protection
• T
J
= 175
o
C
• Ignition Energy Capable
Description
This N-Channel IGBT is a MOS gated, logic level device
which is intended to be used as an ignition coil driver in auto-
motive ignition circuits. Unique features include an active
voltage clamp between the collector and the gate which pro-
vides Self Clamped Inductive Switching (SCIS) capability in
ignition circuits. Internal diodes provide ESD protection for
the logic level gate. Both a series resistor and a shunt
resister are provided in the gate circuit.
PACKAGING AVAILABILITY
PART NUMBER
HGTP14N36G3VL
HGT1S14N36G3VL
HGT1S14N36G3VLS
PACKAGE
TO-220AB
TO-262AA
TO-263AB
BRAND
14N36GVL
14N36GVL
14N36GVL
GATE
COLLECTOR
(FLANGE)
JEDEC TO-262AA
EMITTER
COLLECTOR
GATE
A
JEDEC TO-263AB
M
A
COLLECTOR
(FLANGE)
A
EMITTER
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
COLLECTOR
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in the tape and reel, i.e.,
HGT1S14N36G3VLS9A.
The development type number for this device is TA49021.
R
1
GATE
R
2
EMITTER
Absolute Maximum Ratings
T
C
= +25
o
C, Unless Otherwise Specified
HGTP14N36G3VL,
HGT1S14N36G3VL,
HGT1S14N36G3VLS
390
24
18
14
±10
17
12
332
100
0.67
-40 to +175
260
6
Collector-Emitter Bkdn Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
CER
Emitter-Collector Bkdn Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
ECS
Collector Current Continuous at V
GE
= 5V, T
C
= +25
o
C. . . . . . . . . . . . . . . . . . . . . . . I
C25
at V
GE
= 5V, T
C
= +100
o
C. . . . . . . . . . . . . . . . . . . . . .I
C100
Gate-Emitter Voltage (Note) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GEM
Inductive Switching Current at L = 2.3mH, T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . .I
SCIS
at L = 2.3mH, T
C
= + 175
o
C . . . . . . . . . . . . . . . . . . . . . .I
SCIS
Collector to Emitter Avalanche Energy at L = 2.3mH, T
C
= +25
o
C. . . . . . . . . . . . . . . E
AS
Power Dissipation Total at T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Power Dissipation Derating T
C
> +25
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . .T
J
, T
STG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
Electrostatic Voltage at 100pF, 1500Ω . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ESD
NOTE: May be exceeded if I
GEM
is limited to 10mA.
UNITS
V
V
A
A
V
A
A
mJ
W
W/
o
C
o
C
o
C
KV
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
©
Harris Corporation 1995
File Number
4008
3-55
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