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5962-0622903QYC

Description
Standard SRAM, 512KX32, 25ns, CMOS, CQFP68, 0.950 INCH, NCTB, CERAMIC, MQFP-68
Categorystorage    storage   
File Size365KB,19 Pages
Manufacturere2v technologies
Download Datasheet Parametric View All

5962-0622903QYC Overview

Standard SRAM, 512KX32, 25ns, CMOS, CQFP68, 0.950 INCH, NCTB, CERAMIC, MQFP-68

5962-0622903QYC Parametric

Parameter NameAttribute value
Parts packaging codeQFP
package instructionQFF,
Contacts68
Reach Compliance Codeunknown
ECCN code3A001.A.2.C
Maximum access time25 ns
JESD-30 codeS-CQFP-F68
length24.14 mm
memory density16777216 bit
Memory IC TypeSTANDARD SRAM
memory width32
Number of functions1
Number of terminals68
word count524288 words
character code512000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize512KX32
Package body materialCERAMIC, METAL-SEALED COFIRED
encapsulated codeQFF
Package shapeSQUARE
Package formFLATPACK
Parallel/SerialPARALLEL
Certification statusNot Qualified
Maximum seat height4.7 mm
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelMILITARY
Terminal formFLAT
Terminal pitch1.27 mm
Terminal locationQUAD
width24.14 mm
Base Number Matches1
Features
16 Mbit SRAM Multi Chip Module
Allows 32-, 16- or 8-bit access configuration
Operating Voltage: 3.3V
+
0.3V, 5V Tolerant
Access Time:
– 25 ns, 20 ns
– 18 ns (preliminary information)
Very Low Power Consumption
– Active: 595 mW per byte (Max) @ 20 ns
(1)
, 415mW per byte (Max) @ 50ns
(2)
– Standby: 15 mW (Typ)
Military Temperature Range: -55 to +125°C
TTL-Compatible Inputs and Outputs
Asynchronous
Die manufactured on Atmel 0.25 µm Radiation Hardened Process
No Single Event Latch Up below LET Threshold of 80 MeV/mg/cm
2
Tested up to a Total Dose of 300 krads (Si) according to MIL-STD-883 Method 1019
ESD Better than 2000V
Quality Grades:
– QML-Q or V with SMD 5962-06229
– ESCC
950 Mils Wide MQFP 68 Package
Mass : 8.5 grams
1. For AT68166FT-20 only. 540mW for AT68166FT-25.
2. For AT68166FT-20 only. 450mW for AT68166FT-25.
Rad Hard
16 MegaBit 3.3V
5V Tolerant
SRAM Multi-
Chip Module
AT68166FT
Notes:
Description
The AT68166FT is a 16Mbit SRAM packaged in a hermetic Multi Chip Module (MCM)
for space applications.
The AT68166FT MCM incorporates four 4Mbit AT60142FT SRAM dice. It can be orga-
nized as either one bank of 512Kx8, two banks of 512Kx16 or four banks of 512Kx8. It
combines rad-hard capabilities, a latch-up threshold of 80MeV.cm²/mg, a Multiple Bit
Upset immunity and a total dose tolerance of 300Krads, with a fast access time.
The MCM packaging technology allows a reduction of the PCB area by 50% with a
weight savings of 75% compared to four 4Mbit packages.
Thanks to the small size of the 4Mbit SRAM die, Atmel has been able to accommo-
date the assembly of the four dice on one side of the package which facilitates the
power dissipation.
The compatibility with other products allows designers to easily migrate to the Atmel
AT68166FT memory.
The AT68166FT is powered at 3.3V and is 5V tolerant.
The AT68166FT is processed according to the test methods of the latest revision of
the MIL-PRF-38535 or the ESCC 9000.
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