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AZ23B16-V-G-GS18

Description
DIODE 16 V, 0.3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, GREEN PACKAGE-3, Voltage Regulator Diode
CategoryDiscrete semiconductor    diode   
File Size91KB,8 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric View All

AZ23B16-V-G-GS18 Overview

DIODE 16 V, 0.3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, GREEN PACKAGE-3, Voltage Regulator Diode

AZ23B16-V-G-GS18 Parametric

Parameter NameAttribute value
MakerVishay
package instructionR-PDSO-G3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationCOMMON ANODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeZENER DIODE
Maximum dynamic impedance170 Ω
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components2
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
polarityUNIDIRECTIONAL
Maximum power dissipation0.3 W
Certification statusNot Qualified
Nominal reference voltage16 V
surface mountYES
technologyZENER
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature10
Maximum voltage tolerance1.88%
Working test current5 mA
Base Number Matches1
AZ23-V-G-Series
Vishay Semiconductors
Small Signal Zener Diodes, Dual
Features
• Dual silicon planar Zener diodes,
common anode
• The Zener voltages are graded
according to the international E 24
standard
• The parameters are valid for both diodes
in one case.
ΔV
Z
and
ΔR
zj
of the two
diodes in one case is
5 %
• AEC-Q101 qualified
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
2
1
20512
1
3
20456
Mechanical Data
Case:
SOT-23
Weight:
approx. 8.1 mg
Packaging codes/options:
GS18/10 k per 13" reel, (8 mm tape), 10 k/box
GS08/3 k per 7" reel, (8 mm tape), 15 k/box
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Power dissipation
Test conditions
Device on fiberglass substrate,
see layout on page 6
Symbol
P
tot
Value
300
Unit
mW
Thermal Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
Test conditions
Device on fiberglass substrate,
see layout on page 6
Symbol
R
thJA
T
j
T
stg
Value
420
150
- 65 to + 150
Unit
K/W
°C
°C
** Please see document “Vishay Material Category Policy”:
www.vishay.com/doc?99902
Document Number 85867
Rev. 1.1, 26-Aug-09
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
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