BUK7208-40B
N-channel TrenchMOS standard level FET
Rev. 03 — 7 June 2010
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
Low conduction losses due to low
on-state resistance
Q101 compliant
Suitable for standard level gate drive
sources
Suitable for thermally demanding
environments due to 185 °C rating
1.3 Applications
12 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
drain-source on-state
resistance
Conditions
T
j
≥
25 °C; T
j
≤
185 °C
V
GS
= 10 V; T
mb
= 25 °C;
see
Figure 1;
see
Figure 3
T
mb
= 25 °C; see
Figure 2
V
GS
= 10 V; I
D
= 25 A;
T
j
= 25 °C; see
Figure 11;
see
Figure 12
[1]
Min
-
-
-
-
Typ
-
-
-
6.6
Max Unit
40
75
167
8
V
A
W
mΩ
Static characteristics
Avalanche ruggedness
E
DS(AL)S
non-repetitive
I
D
= 75 A; V
sup
≤
40 V;
drain-source avalanche R
GS
= 50
Ω;
V
GS
= 10 V;
energy
T
j(init)
= 25 °C; unclamped
gate-drain charge
V
GS
= 10 V; I
D
= 25 A;
V
DS
= 32 V; T
j
= 25 °C;
see
Figure 13
-
-
242
mJ
Dynamic characteristics
Q
GD
-
11.5
-
nC
[1]
Continuous current is limited by package.
NXP Semiconductors
BUK7208-40B
N-channel TrenchMOS standard level FET
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G
D
S
D
gate
drain
[1]
source
mounting base; connected to
drain
2
1
3
mb
D
Simplified outline
Graphic symbol
G
mbb076
S
SOT428 (DPAK)
[1]
It is not possible to make connection to pin 2.
3. Ordering information
Table 3.
Ordering information
Package
Name
BUK7208-40B
DPAK
Description
plastic single-ended surface-mounted package (DPAK); 3 leads
(one lead cropped)
Version
SOT428
Type number
BUK7208-40B
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 03 — 7 June 2010
2 of 14
NXP Semiconductors
BUK7208-40B
N-channel TrenchMOS standard level FET
4. Limiting values
Table 4.
Symbol
V
DS
V
DGR
V
GS
I
D
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
T
mb
= 25 °C; V
GS
= 10 V; see
Figure 1;
see
Figure 3
T
mb
= 100 °C; V
GS
= 10 V; see
Figure 1
I
DM
P
tot
T
stg
T
j
I
S
I
SM
E
DS(AL)S
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive
drain-source
avalanche energy
T
mb
= 25 °C
t
p
≤
10 µs; pulsed; T
mb
= 25 °C
I
D
= 75 A; V
sup
≤
40 V; R
GS
= 50
Ω;
V
GS
= 10 V; T
j(init)
= 25 °C; unclamped
[2]
[1]
[1]
[2]
[2]
In accordance with the Absolute Maximum Rating System (IEC 60134).
Conditions
T
j
≥
25 °C; T
j
≤
185 °C
R
GS
= 20 kΩ
Min
-
-
-20
-
-
-
-
-
-55
-55
-
-
-
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
40
40
20
105
75
75
420
167
185
185
75
105
420
242
Unit
V
V
V
A
A
A
A
W
°C
°C
A
A
A
mJ
T
mb
= 25 °C; t
p
≤
10 µs; pulsed; see
Figure 3
T
mb
= 25 °C; see
Figure 2
Source-drain diode
Avalanche ruggedness
[1]
[2]
Current is limited by power dissipation chip rating.
Continuous current is limited by package.
BUK7208-40B
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 03 — 7 June 2010
3 of 14
NXP Semiconductors
BUK7208-40B
N-channel TrenchMOS standard level FET
150
I
D
(A)
100
03nl45
120
P
der
(%)
80
03no96
50
Capped at 75A due to package
40
0
0
50
100
150
200
T
mb
(°C)
0
0
50
100
150
T
mb
(°C)
200
Fig 1.
Normalized continuous drain current as a
function of mounting base temperature
10
3
I
D
(A)
10
2
Fig 2.
Normalized total power dissipation as a
function of mounting base temperature
03nl44
Limit R
DSon
= V
DS
/I
D
t
p
= 10
μ
s
100
μ
s
1 ms
DC
10 ms
100 ms
Capped at 75 A due to package
10
1
1
10
V
DS
(V)
10
2
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK7208-40B
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 03 — 7 June 2010
4 of 14
NXP Semiconductors
BUK7208-40B
N-channel TrenchMOS standard level FET
5. Thermal characteristics
Table 5.
Symbol
R
th(j-mb)
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to
mounting base
thermal resistance from junction to
ambient
Conditions
see
Figure 4
Min
-
-
Typ
-
71.4
Max
0.95
-
Unit
K/W
K/W
1
δ
= 0.5
Z
th(j-mb)
(K/W)
10
−1
0.2
0.1
0.05
0.02
03nk52
10
−2
single shot
P
δ
=
t
p
T
t
p
t
T
10
−3
10
−6
10
−5
10
−4
10
−3
10
−2
10
−1
t
p
(s)
1
Fig 4.
Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK7208-40B
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 03 — 7 June 2010
5 of 14
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