MT8VDDT3264HDG-202XX datasheet, PDF

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MT8VDDT3264HDG-202XX: DescriptionDDR DRAM Module, 32MX64, 0.8ns, CMOS, SODIMM-200; Categorystorage storage; File Size496KB，30 Pages; ManufacturerMicron Technology; Websitehttp://www.mdtic.com.tw/

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MT8VDDT3264HDG-202XX Overview

DDR DRAM Module, 32MX64, 0.8ns, CMOS, SODIMM-200

MT8VDDT3264HDG-202XX Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Parts packaging code	MODULE
package instruction	SODIMM-200
Contacts	200
Reach Compliance Code	compli
ECCN code	EAR99
access mode	DUAL BANK PAGE BURST
Maximum access time	0.8 ns
Other features	AUTO/SELF REFRESH
JESD-30 code	R-XDMA-N200
memory density	2147483648 bi
Memory IC Type	DDR DRAM MODULE
memory width	64
Number of functions	1
Number of ports	1
Number of terminals	200
word count	33554432 words
character code	32000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	32MX64
Package body material	UNSPECIFIED
encapsulated code	DIMM
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)	235
Certification status	Not Qualified
self refresh	YES
Maximum supply voltage (Vsup)	2.7 V
Minimum supply voltage (Vsup)	2.3 V
Nominal supply voltage (Vsup)	2.5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	NO LEAD
Terminal location	DUAL
Maximum time at peak reflow temperature	30
Base Number Matches	1

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128MB, 256MB, 512MB (x64)

200-PIN DDR SODIMM

SMALL-OUTLINE

DDR SDRAM MODULE

Features

• 200-pin, small-outline, dual in-line memory

module (SODIMM)

• Fast data transfer rates PC1600, PC2100, or PC2700

• Utilizes 200 MT/s, 266 MT/s, and 333MT/s DDR

SDRAM components

• 128MB (16 Meg x 64), 256MB (32 Meg x 64), or

512MB (64 Meg x 64)

• V

= V

Q = +2.5V

• V

DDSPD

= +2.3V to +3.6V

• 2.5V I/O (SSTL_2 compatible)

• Commands entered on each positive CK edge

• DQS edge-aligned with data for READs; center-

aligned with data for WRITEs

• Internal, pipelined double data rate (DDR)

architecture; two data accesses per clock cycle

• Bidirectional data strobe (DQS) transmitted/received

with data—i.e., source-synchronous data capture

• Differential clock inputs CK and CK#

• Four internal device banks for concurrent operation

• Programmable burst lengths: 2, 4, or 8

• Auto precharge option

• Serial Presence Detect (SPD) with EEPROM

• Programmable READ CAS latency

• Auto Refresh and Self Refresh Modes

• 15.6µs (128MB), 7.8125µs (256MB and 512MB)

maximum average periodic refresh interval

• Gold edge contacts

MT8VDDT1664HD – 128MB

MT8VDDT3264HD – 256MB

MT8VDDT6464HD – 512MB

For the latest data sheet, please refer to the Micron

Web

site:

www.micron.com/moduleds

Figure 1: 200-Pin SODIMM (MO-224)

OPTIONS

• Package

200-pin SODIMM (Standard)

200-pin SODIMM (Lead-free)

• Frequency/CAS Latency

6ns/166 MHz (333MT/s) CL=2.5

7.5ns/133 MHz (266 MT/s) CL = 2

7.5ns/133 MHz (266 MT/s) CL = 2.5

10ns/100 MHz (200 MT/s) CL = 2

NOTE:

MARKING

-335

-262

-26A

-265

-202

1. Consult with factory for availability of lead-free

products.

2. CL = CAS (READ) Latency

Table 1:

Address Table

128MB

256MB

8K (A0–A12)

4 (BA0, BA1)

16 Meg x 16

512 (A0–A8)

2 (S0#, S1#)

512MB

8K (A0–A12)

4 (BA0, BA1)

32 Meg x 16

1K (A0–A9)

2 (S0#, S1#)

4K (A0–A11)

4 (BA0, BA1)

8 Meg x 16

512 (A0–A8)

2 (S0#, S1#)

Refresh Count

Row Addressing

Device Bank Addressing

Device Configuration

Column Addressing

Module Rank Addressing

09005aef806e1d28

DD8C16_32_64x64HDG_B.fm - Rev. B 10/03 EN

PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE.

MT8VDDT3264HDG-202XX Related Products

	MT8VDDT3264HDG-202XX	MT8VDDT3264HDY-202XX	MT8VDDT6464HDG-202XX	MT8VDDT1664HDG-202XX	MT8VDDT1664HDY-202XX	MT8VDDT6464HDY-202XX
Description	DDR DRAM Module, 32MX64, 0.8ns, CMOS, SODIMM-200	DDR DRAM Module, 32MX64, 0.8ns, CMOS, SODIMM-200	DDR DRAM Module, 64MX64, 0.8ns, CMOS, SODIMM-200	DDR DRAM Module, 16MX64, 0.8ns, CMOS, SODIMM-200	DDR DRAM Module, 16MX64, 0.8ns, CMOS, SODIMM-200	DDR DRAM Module, 64MX64, 0.8ns, CMOS, SODIMM-200
Parts packaging code	MODULE	MODULE	MODULE	MODULE	MODULE	MODULE
package instruction	SODIMM-200	DIMM,	DIMM,	DIMM,	DIMM,	DIMM,
Contacts	200	200	200	200	200	200
Reach Compliance Code	compli	compliant	unknown	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
access mode	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST
Maximum access time	0.8 ns	0.8 ns	0.8 ns	0.8 ns	0.8 ns	0.8 ns
Other features	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
JESD-30 code	R-XDMA-N200	R-XDMA-N200	R-XDMA-N200	R-XDMA-N200	R-XDMA-N200	R-XDMA-N200
memory density	2147483648 bi	2147483648 bit	4294967296 bit	1073741824 bit	1073741824 bit	4294967296 bit
Memory IC Type	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE
memory width	64	64	64	64	64	64
Number of functions	1	1	1	1	1	1
Number of ports	1	1	1	1	1	1
Number of terminals	200	200	200	200	200	200
word count	33554432 words	33554432 words	67108864 words	16777216 words	16777216 words	67108864 words
character code	32000000	32000000	64000000	16000000	16000000	64000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
organize	32MX64	32MX64	64MX64	16MX64	16MX64	64MX64
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
encapsulated code	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
self refresh	YES	YES	YES	YES	YES	YES
Maximum supply voltage (Vsup)	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V
Minimum supply voltage (Vsup)	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V
Nominal supply voltage (Vsup)	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V
surface mount	NO	NO	NO	NO	NO	NO
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal form	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Is it lead-free?	Contains lead	Lead free	-	Contains lead	Lead free	Lead free
Is it Rohs certified?	incompatible	conform to	-	incompatible	conform to	conform to
Peak Reflow Temperature (Celsius)	235	260	-	235	260	260
Maximum time at peak reflow temperature	30	30	-	30	30	30
Maker	-	Micron Technology	-	Micron Technology	Micron Technology	Micron Technology

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