5962-9754501QXA datasheet, PDF

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5962-9754501QXA: Description1MX16 SYNCHRONOUS DRAM, 15ns, CDFP50, CERAMIC, DFP-50; Categorystorage storage; File Size539KB，51 Pages; ManufacturerTexas Instruments; Websitehttp://www.ti.com.cn/

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5962-9754501QXA Overview

1MX16 SYNCHRONOUS DRAM, 15ns, CDFP50, CERAMIC, DFP-50

5962-9754501QXA Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Parts packaging code	DFP
package instruction	DFP, FL50,.67,32
Contacts	50
Reach Compliance Code	not_compliant
ECCN code	EAR99
access mode	DUAL BANK PAGE BURST
Maximum access time	15 ns
Other features	AUTO REFRESH
Maximum clock frequency (fCLK)	66 MHz
I/O type	COMMON
interleaved burst length	1,2,4,8
JESD-30 code	R-CDFP-F50
length	21 mm
memory density	16777216 bit
Memory IC Type	SYNCHRONOUS DRAM
memory width	16
Number of functions	1
Number of ports	1
Number of terminals	50
word count	1048576 words
character code	1000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	1MX16
Output characteristics	3-STATE
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	DFP
Encapsulate equivalent code	FL50,.67,32
Package shape	RECTANGULAR
Package form	FLATPACK
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	3.3 V
Certification status	Not Qualified
refresh cycle	4096
Filter level	MIL-PRF-38535 Class Q
Maximum seat height	3.55 mm
Continuous burst length	1,2,4,8,FP
Maximum standby current	0.002 A
Maximum slew rate	0.175 mA
Maximum supply voltage (Vsup)	3.465 V
Minimum supply voltage (Vsup)	3.135 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	MILITARY
Terminal form	FLAT
Terminal pitch	0.8 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
width	16.5 mm
Base Number Matches	1

5962-9754501QXA Related Products

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Description	1MX16 SYNCHRONOUS DRAM, 15ns, CDFP50, CERAMIC, DFP-50	1MX16 SYNCHRONOUS DRAM, 20ns, PDSO50, PLASTIC, TSOP2-50	1MX16 SYNCHRONOUS DRAM, 20ns, CDFP50, CERAMIC, DFP-50	1MX16 SYNCHRONOUS DRAM, 12ns, CDFP50, CERAMIC, DFP-50	1MX16 SYNCHRONOUS DRAM, 15ns, PDSO50, PLASTIC, TSOP2-50	1MX16 SYNCHRONOUS DRAM, 12ns, PDSO50, PLASTIC, TSOP2-50
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Parts packaging code	DFP	TSOP2	DFP	DFP	TSOP2	TSOP2
package instruction	DFP, FL50,.67,32	TSOP2, TSOP50,.46,32	DFP, FL50,.67,32	DFP, FL50,.67,32	TSOP2, TSOP50,.46,32	TSOP2, TSOP50,.46,32
Contacts	50	50	50	50	50	50
Reach Compliance Code	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
access mode	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST
Maximum access time	15 ns	20 ns	20 ns	12 ns	15 ns	12 ns
Other features	AUTO REFRESH	AUTO REFRESH	AUTO REFRESH	AUTO REFRESH	AUTO REFRESH	AUTO REFRESH
Maximum clock frequency (fCLK)	66 MHz	50 MHz	50 MHz	83 MHz	66 MHz	83 MHz
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
interleaved burst length	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8
JESD-30 code	R-CDFP-F50	R-PDSO-G50	R-CDFP-F50	R-CDFP-F50	R-PDSO-G50	R-PDSO-G50
length	21 mm	20.95 mm	21 mm	21 mm	20.95 mm	20.95 mm
memory density	16777216 bit	16777216 bit	16777216 bit	16777216 bit	16777216 bit	16777216 bit
Memory IC Type	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM
memory width	16	16	16	16	16	16
Number of functions	1	1	1	1	1	1
Number of ports	1	1	1	1	1	1
Number of terminals	50	50	50	50	50	50
word count	1048576 words	1048576 words	1048576 words	1048576 words	1048576 words	1048576 words
character code	1000000	1000000	1000000	1000000	1000000	1000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C
organize	1MX16	1MX16	1MX16	1MX16	1MX16	1MX16
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	CERAMIC, METAL-SEALED COFIRED	PLASTIC/EPOXY	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	DFP	TSOP2	DFP	DFP	TSOP2	TSOP2
Encapsulate equivalent code	FL50,.67,32	TSOP50,.46,32	FL50,.67,32	FL50,.67,32	TSOP50,.46,32	TSOP50,.46,32
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLATPACK	SMALL OUTLINE, THIN PROFILE	FLATPACK	FLATPACK	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
power supply	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
refresh cycle	4096	4096	4096	4096	4096	4096
Filter level	MIL-PRF-38535 Class Q	MIL-STD-883	MIL-PRF-38535 Class Q	MIL-PRF-38535 Class Q	MIL-STD-883	MIL-STD-883
Maximum seat height	3.55 mm	1.2 mm	3.55 mm	3.55 mm	1.2 mm	1.2 mm
Continuous burst length	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP
Maximum standby current	0.002 A	0.002 A	0.002 A	0.002 A	0.002 A	0.002 A
Maximum slew rate	0.175 mA	0.15 mA	0.15 mA	0.18 mA	0.175 mA	0.18 mA
Maximum supply voltage (Vsup)	3.465 V	3.465 V	3.465 V	3.465 V	3.465 V	3.465 V
Minimum supply voltage (Vsup)	3.135 V	3.135 V	3.135 V	3.135 V	3.135 V	3.135 V
Nominal supply voltage (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
surface mount	YES	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY
Terminal form	FLAT	GULL WING	FLAT	FLAT	GULL WING	GULL WING
Terminal pitch	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
width	16.5 mm	10.16 mm	16.5 mm	16.5 mm	10.16 mm	10.16 mm
Base Number Matches	1	1	1	1	1	1

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