MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
*Motorola preferred devices
MAC16
SERIES*
TRIACS
Silicon Bidirectional Thyristors
Designed for high performance full-wave ac control applications where high
noise immunity and high commutating di/dt are required.
•
Blocking Voltage to 800 Volts
•
On-State Current Rating of 15 Amperes RMS at 80°C
•
Uniform Gate Trigger Currents in Three Modes
•
High Immunity to dv/dt — 500 V/µs minimum at 125°C
•
Minimizes Snubber Networks for Protection
•
Industry Standard TO-220AB Package
•
High Commutating di/dt — 9.0 A/ms minimum at 125°C
TRIACS
15 AMPERES RMS
400 thru 800
VOLTS
MT2
MT1
MT2
G
CASE 221A-06
(TO-220AB)
Style 4
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted)
Symbol
VDRM
Parameter
Peak Repetitive Off-State Voltage, (1)
(– 40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open)
MAC16D
MAC16M
MAC16N
Value
400
600
800
15
150
93
20
0.5
– 40 to +125
– 40 to +150
A
A
A2sec
Watts
Watts
°C
°C
Unit
Volts
IT(RMS)
ITSM
I2t
PGM
PG(AV)
TJ
Tstg
On-State RMS Current
(60 Hz, TC = 80°C)
Peak Non-repetitive Surge Current
(One Full Cycle, 60 Hz, TJ = 125°C)
Circuit Fusing Consideration (t = 8.3 ms)
Peak Gate Power (Pulse Width
≤
1.0
µs,
TC = 80°C)
Average Gate Power (t = 8.3 ms, TC = 80°C)
Operating Junction Temperature Range
Storage Temperature Range
THERMAL CHARACTERISTICS
R
θJC
R
θJA
TL
Thermal Resistance — Junction to Case
Thermal Resistance
— Junction to Ambient
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
2.0
62.5
260
°C/W
°C
(1) VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 1
Motorola Thyristor Device Data
3–67
MAC16 SERIES
ELECTRICAL CHARACTERISTICS
(TJ = 25°C unless otherwise noted)
Symbol
Characteristic
Min
Typ
Max
Unit
OFF CHARACTERISTICS
IDRM
Peak Repetitive Blocking Current
(VD = Rated VDRM, Gate Open)
mA
TJ = 25°C
TJ = 125°C
—
—
—
—
0.01
2.0
ON CHARACTERISTICS
VTM
IGT
Peak On-State Voltage*
(ITM =
±
21 A Peak)
Continuous Gate Trigger Current (VD = 12 V, RL = 100
Ω)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
Hold Current
(VD = 12 V, Gate Open, Initiating Current =
±150
mA)
Latch Current (VD = 24 V, IG = 50 mA)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
Gate Trigger Voltage (VD = 12 V, RL = 100
Ω)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
Volts
—
10
10
10
—
—
—
—
0.5
0.5
0.5
1.2
16
18
22
20
33
36
33
0.75
0.72
0.82
1.6
mA
50
50
50
mA
50
mA
50
80
50
Volts
1.5
1.5
1.5
IH
IL
VGT
DYNAMIC CHARACTERISTICS
(di/dt)c
Rate of Change of Commutating Current* See Figure 10.
(VD = 400 V, ITM = 6.0 A, Commutating dv/dt = 24 V/µs,
Gate Open, TJ = 125°C, f = 250 Hz, No Snubber)
9.0
CL = 10
µF
LL = 40 mH
500
—
—
V/µs
—
—
A/ms
dv/dt
Critical Rate of Rise of Off-State Voltage
(VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C)
*Indicates Pulse Test: Pulse Width
≤
2.0 ms, Duty Cycle
≤
2%.
125
PAV, AVERAGE POWER (WATTS)
120
TC, CASE TEMPERATURE (
°
C)
115
110
105
100
95
90
85
80
0
2
6
8
10
12
IT(RMS), RMS ON-STATE CURRENT (AMP)
4
14
16
α
= 180°
α
= 30 and 60°
α
= 90°
α
= 120°
20
18
16
14
12
10
8
6
4
2
0
0
2
4
6
8
10
12
IT(RMS), ON-STATE CURRENT (AMP)
14
16
α
= 30°
DC
180°
120°
90°
60°
DC
Figure 1. RMS Current Derating
Figure 2. On-State Power Dissipation
3–68
Motorola Thyristor Device Data
MAC16 SERIES
100
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
1
TYPICAL AT
TJ = 25°C
MAXIMUM @ TJ = 125°C
0.1
I T, INSTANTANEOUS ON-STATE CURRENT (AMP)
10
0.01
0.1
1
10
100
t, TIME (ms)
1000
1 · 104
Figure 4. Thermal Response
MAXIMUM @ TJ = 25°C
1
I H, HOLD CURRENT (mA)
40
MT2 POSITIVE
MT2 NEGATIVE
0.1
0
0.5
1
1.5
2
2.5
3
3.5
VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
4
5
– 40
– 10
20
50
80
TJ, JUNCTION TEMPERATURE (°C)
110 125
Figure 3. On-State Characteristics
Figure 5. Hold Current Variation
100
VGT, GATE TRIGGER VOLTAGE (VOLT)
IGT, GATE TRIGGER CURRENT (mA)
1
OFF-STATE VOLTAGE = 12 V
RL = 140
Ω
Q2
Q3
Q1
Q1
Q3
Q2
OFF-STATE VOLTAGE = 12 V
RL = 140
Ω
1
– 40
– 10
20
50
80
TJ, JUNCTION TEMPERATURE (°C)
110
125
0.5
– 40
– 10
+20
50
80
TJ, JUNCTION TEMPERATURE (°C)
110
125
Figure 6. Gate Trigger Current Variation
Figure 7. Gate Trigger Voltage Variation
3–69
Motorola Thyristor Device Data
MAC16 SERIES
dv/dt , CRITICAL RATE OF RISE OF OFF-STATE VOLTAGE
(V/
µ
s)
5000
(dv/dt) c , CRITICAL RATE OF RISE OF
COMMUTATING VOLTAGE (V/
µ
s)
VD = 800 Vpk
TJ = 125°C
100
4K
3K
TJ = 125°C
10
ITM
tw
VDRM
f=
100°C
75°C
2K
1
2 tw
1K
6f I
(di/dt)c = TM
1000
0
10
100
1000
RG, GATE TO MAIN TERMINAL 1 RESISTANCE (OHMS)
10000
1
10
20
30
40
50
60
70
80
90
100
(di/dt)c, RATE OF CHANGE OF COMMUTATING CURRENT (A/ms)
Figure 8. Critical Rate of Rise of Off-State Voltage
(Exponential)
Figure 9. Critical Rate of Rise of
Commutating Voltage
LL
200 VRMS
ADJUST FOR
ITM, 60 Hz VAC
TRIGGER
CHARGE
CONTROL
TRIGGER CONTROL
MEASURE
I
1N4007
–
+
2
1N914 51
G
1
CHARGE
400 V
NON-POLAR
CL
Note: Component values are for verification of rated (dv/dt)c. See AN1048 for additional information.
Figure 10. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Voltage
3–70
Motorola Thyristor Device Data
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