MA4X746 datasheet, PDF - EEWORLD Datasheet

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MA4X746: DescriptionSilicon epitaxial planar type; CategoryDiscrete semiconductor diode; File Size46KB，2 Pages; ManufacturerPanasonic; Websitehttp://www.panasonic.co.jp/semicon/e-index.html; Environmental Compliance

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MA4X746 Overview

Silicon epitaxial planar type

MA4X746 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Panasonic
Parts packaging code	SC-61
package instruction	R-PDSO-G4
Contacts	4
Reach Compliance Code	unknown
ECCN code	EAR99
application	EFFICIENCY
Configuration	SEPARATE, 2 ELEMENTS
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	0.55 V
JESD-30 code	R-PDSO-G4
Maximum non-repetitive peak forward current	1 A
Number of components	2
Phase	1
Number of terminals	4
Maximum operating temperature	125 °C
Maximum output current	0.2 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	50 V
Maximum reverse current	200 µA
Maximum reverse recovery time	0.003 µs
Reverse test voltage	50 V
surface mount	YES
technology	SCHOTTKY
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	10

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Schottky Barrier Diodes (SBD)

MA4X746

Silicon epitaxial planar type

Unit : mm

For super-high speed switching circuit

For small current rectification

Features

•

F(AV)

= 200 mA, and V

> 50 V is achieved

•

Allowing automatic insertion with the emboss taping

•

Optimum for high-frequency rectification because of its short

reverse recovery time (t

)

•

High rectification efficiency caused by its low forward-rise-

voltage (V

)

2.8

−

0.3

0.65

0.15

1.5

0.25

−

0.05

0.2

0.65

0.15

0.5 R

1.9

0.2

2.9

−

0.05

0.95

0.2

0.95

0.5

0.1

0.4

−

0.05

0.2

−

0.1

Absolute Maximum Ratings

25°C

Parameter

Reverse voltage (DC)

Repetitive peak reverse voltage

Non repetitive peak

forward current

Peak forward

current

Average forward

current

1.1

Symbol

RRM

FSM

F(AV)

stg

Single

Double

Rating

0.75

300

225

200

150

−55

+150

Unit

0.4

0.2

1 : Cathode 1

2 : Cathode 2

3 : Anode 2

4 : Anode 1

Mini Type Package (4-pin)

Marking Symbol: M3M

Single

Double

Single

Double

Internal Connection

°C

Junction temperature

Storage temperature

Note) *1 : Value per chip

*2 : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive)

Electrical Characteristics

25°C

Parameter

Reverse current (DC)

Forward voltage (DC)

Symbol

Terminal capacitance

Reverse recovery time

= 50 V

= 30 mA

= 200 mA

= 0 V, f = 1 MHz

= I

= 100 mA

= 10 mA, R

= 100

Ω

Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a

human body and the leakage of current from the operating equipment.

2. Rated input/output frequency: 2 000 MHz

Bias Application Unit N-50BU

3. * : t

measuring instrument

10%

Input Pulse

10 mA

100 mA

100

Ω

Output Pulse

Conditions

Min

Typ

0 to 0.1

0.1 to 0.3

0.8

Max

200

0.36

0.55

0.16

−

0.06

0.1

0.6

0.1

−

0.4

−

0.05

1.45

0.1

Unit

µA

3.0

Pulse Generator

(PG-10N)

Ω

W.F.Analyzer

(SAS-8130)

Ω

90%

µs

0.35 ns

δ =

0.05

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