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3N173

Description
Small Signal Field-Effect Transistor, 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-72,
CategoryDiscrete semiconductor    The transistor   
File Size93KB,2 Pages
ManufacturerSolitron Devices Inc.
Download Datasheet Parametric View All

3N173 Overview

Small Signal Field-Effect Transistor, 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-72,

3N173 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE
Minimum drain-source breakdown voltage30 V
Maximum drain current (Abs) (ID)0.05 A
Maximum drain-source on-resistance350 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)1 pF
JEDEC-95 codeTO-72
JESD-30 codeO-MBCY-W4
Number of components1
Number of terminals4
Operating modeENHANCEMENT MODE
Maximum operating temperature200 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)0.375 W
Certification statusNot Qualified
surface mountNO
Terminal formWIRE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
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