BSM 35 GD 120 DN2
IGBT Power Module
Preliminary data
• Power module
• 3-phase full-bridge
• Including fast free-wheel diodes
• Package with insulated metal base plate
Type
BSM 35 GD 120 DN2
BSM35GD120DN2E3224
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
Symbol
Values
1200
1200
Unit
V
V
CE
I
C
Package
ECONOPACK 2
ECONOPACK 2K
Ordering Code
C67076-A2506-A67
C67070-A2506-A67
1200V 50A
1200V 50A
V
CE
V
CGR
V
GE
I
C
R
GE
= 20 kΩ
Gate-emitter voltage
DC collector current
± 20
A
50
35
T
C
= 25 °C
T
C
= 80 °C
Pulsed collector current,
t
p
= 1 ms
I
Cpuls
100
70
T
C
= 25 °C
T
C
= 80 °C
Power dissipation per IGBT
P
tot
280
W
+ 150
-55 ... + 150
≤
0.44
≤
0.8
2500
16
11
F
55 / 150 / 56
sec
Vac
mm
K/W
°C
T
C
= 25 °C
Chip temperature
Storage temperature
Thermal resistance, chip case
Diode thermal resistance, chip case
Insulation test voltage,
t
= 1min.
Creepage distance
Clearance
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
T
j
T
stg
R
thJC
R
thJCD
V
is
-
-
-
-
Semiconductor Group
1
Jan-09-1997
BSM 35 GD 120 DN2
Electrical Characteristics,
at T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
min.
Static Characteristics
Gate threshold voltage
Values
typ.
max.
Unit
V
GE(th)
4.5
5.5
2.7
3.3
0.6
2.4
-
6.5
3.2
3.9
V
V
GE
=
V
CE,
I
C
= 1.2 mA
Collector-emitter saturation voltage
V
CE(sat)
-
-
V
GE
= 15 V,
I
C
= 35 A,
T
j
= 25 °C
V
GE
= 15 V,
I
C
= 35 A,
T
j
= 125 °C
Zero gate voltage collector current
I
CES
-
-
1
-
mA
V
CE
= 1200 V,
V
GE
= 0 V,
T
j
= 25 °C
V
CE
= 1200 V,
V
GE
= 0 V,
T
j
= 125 °C
Gate-emitter leakage current
I
GES
-
150
nA
V
GE
= 20 V,
V
CE
= 0 V
AC Characteristics
Transconductance
g
fs
11
-
2
0.3
0.14
-
S
nF
-
-
-
-
V
CE
= 20 V,
I
C
= 35 A
Input capacitance
C
iss
C
oss
-
V
CE
= 25 V,
V
GE
= 0 V,
f
= 1 MHz
Output capacitance
V
CE
= 25 V,
V
GE
= 0 V,
f
= 1 MHz
Reverse transfer capacitance
C
rss
-
V
CE
= 25 V,
V
GE
= 0 V,
f
= 1 MHz
Semiconductor Group
2
Jan-09-1997
BSM 35 GD 120 DN2
Electrical Characteristics,
at T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
min.
Switching Characteristics, Inductive Load at
T
j
= 125 °C
Turn-on delay time
Values
typ.
max.
Unit
t
d(on)
-
60
120
ns
V
CC
= 600 V,
V
GE
= 15 V,
I
C
= 35 A
R
Gon
= 39
Ω
Rise time
t
r
-
60
120
V
CC
= 600 V,
V
GE
= 15 V,
I
C
= 35 A
R
Gon
= 39
Ω
Turn-off delay time
t
d(off)
-
400
600
V
CC
= 600 V,
V
GE
= -15 V,
I
C
= 35 A
R
Goff
= 39
Ω
Fall time
t
f
-
50
75
V
CC
= 600 V,
V
GE
= -15 V,
I
C
= 35 A
R
Goff
= 39
Ω
Free-Wheel Diode
Diode forward voltage
V
F
-
-
2.3
1.9
2.9
-
V
I
F
= 35 A,
V
GE
= 0 V,
T
j
= 25 °C
I
F
= 35 A,
V
GE
= 0 V,
T
j
= 125 °C
Reverse recovery time
t
rr
-
0.25
-
µs
I
F
= 35 A,
V
R
= -600 V,
V
GE
= 0 V
di
F
/dt = -800 A/µs,
T
j
= 125 °C
Reverse recovery charge
Q
rr
µC
I
F
= 35 A,
V
R
= -600 V,
V
GE
= 0 V
di
F
/dt = -800 A/µs
T
j
= 25 °C
T
j
= 125 °C
-
-
2
5
-
-
Semiconductor Group
3
Jan-09-1997
BSM 35 GD 120 DN2
Power dissipation
P
tot
=
ƒ
(T
C
)
parameter:
T
j
≤
150 °C
300
W
260
Safe operating area
I
C
=
ƒ
(V
CE
)
parameter:
D
= 0,
T
C
= 25°C ,
T
j
≤
150 °C
10
3
A
P
tot
240
220
200
180
160
140
120
100
80
60
40
20
0
0
I
C
10
2
tp
= 18.0µs
100 µs
10
1
1 ms
10
0
10 ms
DC
20
40
60
80
100
120
°C
160
10
-1
0
10
10
1
10
2
10
3
V
T
C
V
CE
Collector current
I
C
=
ƒ
(T
C
)
parameter:
V
GE
≥
15 V ,
T
j
≤
150 °C
55
A
Transient thermal impedance
Z
th JC
=
ƒ
(t
p
)
parameter:
D = t
p
/
T
10
0
IGBT
K/W
I
C
45
40
35
30
25
20
15
10
5
0
0
20
40
60
80
100
120
°C
160
Z
thJC
10
-1
10
-2
D = 0.50
0.20
0.10
10
-3
single pulse
0.05
0.02
0.01
10
-4
-5
10
10
-4
10
-3
10
-2
10
-1
s 10
0
T
C
t
p
Semiconductor Group
4
Jan-09-1997
BSM 35 GD 120 DN2
Typ. output characteristics
Typ. output characteristics
I
C
= f (V
CE
)
parameter:
t
p
= 80 µs,
T
j
= 25 °C
70
A
60
17V
15V
13V
11V
9V
7V
I
C
= f (V
CE
)
parameter:
t
p
= 80 µs,
T
j
= 125 °C
70
A
60
17V
15V
13V
11V
9V
7V
I
C
55
50
45
40
35
30
25
20
15
10
5
0
0
I
C
55
50
45
40
35
30
25
20
15
10
5
0
0
1
2
3
V
5
1
2
3
V
5
V
CE
V
CE
Typ. transfer characteristics
I
C
= f (V
GE
)
parameter:
t
p
= 80 µs,
V
CE
= 20 V
70
A
60
I
C
55
50
45
40
35
30
25
20
15
10
5
0
0
2
4
6
8
10
V
14
V
GE
Semiconductor Group
5
Jan-09-1997
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