Schottky Barrier Diodes (SBD)
MA3X721D, MA3X721E
Silicon epitaxial planar type
Unit : mm
For super-high speed switching circuit
For small current rectification
•
Two MA3X721s are contained in one package
•
Allowing to rectify under (I
F(AV)
= 200 mA) condition
(for the single diode)
2.9
−
0.05
+
0.2
2.8
0.65
±
0.15
+
0.2
−
0.3
+
0.25
1.5
−
0.05
0.65
±
0.15
1.9
±
0.2
I
Features
0.95
1
3
2
0.95
1.45
+
0.2
−
0.1
Parameter
Reverse voltage (DC)
Repetitive peak reverse voltage
Peak forward
current
Average forward
current
Single
Double
*1
Single
Double
*1
Symbol
V
R
V
RRM
I
FM
I
F(AV)
I
FSM
T
j
T
stg
Rating
30
30
300
220
200
130
1
0.7
150
−55
to
+150
Unit
V
V
mA
mA
JEDEC : TO-236
EIAJ : SC-59
Mini Type Package (3-pin)
MA3X721D MA3X721E
1 Cathode Anode
2 Cathode Anode
3 Anode Cathode
Single
Non-repetitive peak
*2
forward surge current Double
*1
Junction temperature
Storage temperature
A
°C
°C
Marking Symbol
•
MA3X721D
: M3H
•
MA3X721E
: M3F
Internal Connection
1
3
2
2
1
3
Note) *1 : Value per chip
*2 : The peak-to-peak value in one cycle of 50 Hz sine-wave
(non-repetitive)
I
Electrical Characteristics
T
a
=
25°C
Parameter
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time
*
Symbol
I
R
V
F
C
t
t
rr
V
R
= 30 V
I
F
= 200 mA
V
R
= 10 V, f = 1 MHz
I
F
= I
R
= 100 mA
I
rr
= 10 mA, R
L
= 100
Ω
Conditions
D
Min
Typ
0 to 0.1
0.1 to 0.3
0.4
±
0.2
1.1
0.8
E
Max
50
0.55
30
3
Unit
µA
V
pF
ns
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment
2. Rated input/output frequency: 1 000 MHz
3. * : t
rr
measuring instrument
Bias Application Unit N-50BU
t
r
10%
Input Pulse
t
p
t
I
F
t
rr
t
I
rr
=
10 mA
I
F
=
100 mA
I
R
=
100 mA
R
L
=
100
Ω
Output Pulse
A
V
R
Pulse Generator
(PG-10N)
R
s
=
50
Ω
W.F.Analyzer
(SAS-8130)
R
i
=
50
Ω
90%
t
p
=
2
µs
t
r
=
0.35 ns
δ =
0.05
0.16
−
0.06
I
Absolute Maximum Ratings
T
a
=
25°C
+
0.1
0.4
−
0.05
+
0.1
1
Microcontroller MCU
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