〈Transistor〉
2SC5814，2SC5815，2SC5816，2SC5817
For Low Frequency Amplify Application
Silicon NPN Epitaxial Type
DESCRIPTION
2SC5814，2SC5815，2SC5816，2SC5817 is a super mini package
silicon NPN epitaxial type transistor. It is designed for low frequency
voltage amplify application.
0.95
0.5
OUTLINE DRAWING
2SC5814
2.5
1.5
0.5
0.425
Unit：½½
2SC5815
2.1
1.25
0.425
0.4
0.65
2.9
1.90
2.0
1.3
①
②
③
①
②
③
FEATURE
● Facilitates miniaturization and high-density mounting
0.16
0.15
0.8
0.7
0.95
● Excellent linearity of DC forward current gain
●Low collecter to emitter saturation voltage
V
CE(sat)
=0.3V max (@I
C
=30mA,I
B
=1.5mA)
1.1
0½0.1
0.9
0.65
APPLICATION
For hybrid IC , small type machine low frequency voltage amplify
application
JEITA：SC-59
JEDEC：similar to TO-236
Electrode connections
①：base
②：emitter
③：collecter
2SC5816
0.4
1.6
0.8
0.4
0.3
JEITA：SC-70
JEDEC：－
Electrode connections
①：base
②：emitter
③：collecter
2SC5817
1.2
0.8
0.5
0½0.1
1.6
1.0
0.4
①
②
③
1.2
0.8
0.5
①
②
③
MARKING
0.7
0.55
0.1
0.45
0.4
JEITA：－
JEDEC：－
0½0.1
Ｅ Ｒ
TYPE NAME
½
ＦＥ
ITEM
JEITA：－
JEDEC：－
Electrode connections
①：base
②：emitter
③：collecter
Electrode connections
①：base
②：emitter
③：collecter
MAXIMUM RATINGS (Ta=25℃)
SYMBOL
V
CBO
V
EBO
V
CEO
I
C
PARAMETER
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
RATINGS
2SC5814
2SC5815
60
6
60
125
150
＋125
-55½＋125
125
100
2SC5816
2SC5817
UNIT
V
V
V
mA
mW
℃
℃
P
C
T
j
T
stg
ISAHAYA ELECTRONICS CORPORATION
0.1
0.25
0.3
〈Transistor〉
2SC5814，2SC5815，2SC5816，2SC5817
For Low Frequency Amplify Application
Silicon NPN Epitaxial Type
ELECTRICAL CHARACTERISTICS (Ta=25℃)
SYMBOL
V
(BR)CEO
I
CBO
I
EBO
½
ＦＥ
＊
½
ＦＥ
V
CE(sat)
f
T
Cob
PARAMETER
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
DC forward current gain
C to E saturation voltage
Gain band width product
Collector output capacitance
TEST CONDITIONS
I
C
=100uA，R
BE
=∞
V
CB
=60V，I
E
=0mA
V
EB
=4V，I
C
=0mA
V
CE
=6V，I
C
=1mA
V
CE
=6V，I
C
=0.1mA
I
C
=30mA，I
B
=1.5mA
V
CE
=6V，I
E
=-10mA
V
CB
=6V，I
E
=0mA，f=1MHz
Item
½
ＦＥ
Marking
Q
120½270
EQ
R
180½390
ER
200
1.5
S
180½390
ES
120
70
0.3
LIMITS
MIN
60
0.5
0.5
560
TYP
MAX
UNIT
V
μA
μA
-
-
V
MHz
pF
＊ It shows ½
ＦＥ
classification in right table.
Item
½
ＦＥ
Marking
E
150½300
EE
F
250½500
EF
ISAHAYA ELECTRONICS CORPORATION
Marketing division, Marketing planning department
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
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·
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there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or
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·
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Jan.2003
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