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MUN5316DW1T2

Description
100mA, 50V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, CASE 419B-01, 6 PIN
CategoryDiscrete semiconductor    The transistor   
File Size307KB,16 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric Compare View All

MUN5316DW1T2 Overview

100mA, 50V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, CASE 419B-01, 6 PIN

MUN5316DW1T2 Parametric

Parameter NameAttribute value
MakerON Semiconductor
package instructionSMALL OUTLINE, R-PDSO-G6
Contacts6
Manufacturer packaging codeCASE 419B-01
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)160
JESD-30 codeR-PDSO-G6
Number of components2
Number of terminals6
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN AND PNP
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Transistor component materialsSILICON
Base Number Matches1
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MUN5311DW1T1/D
Dual Bias Resistor Transistors
NPN and PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with a
monolithic bias network consisting of two resistors; a series base resistor and a
base–emitter resistor. These digital transistors are designed to replace a single
device and its external resistor bias network. The BRT eliminates these
individual components by integrating them into a single device. In the
MUN5311DW1T1 series, two complementary BRT devices are housed in the
SOT–363 package which is ideal for low power surface mount applications
where board space is at a premium.
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Available in 8 mm, 7 inch/3000 Unit Tape and Reel.
MUN5311DW1T1
SERIES
Motorola Preferred Devices
6
5
4
1
2
3
CASE 419B–01, STYLE 1
SOT–363
(3)
R1
Q1
(2)
R2
(1)
Q2
R2
(4)
(5)
R1
(6)
MAXIMUM RATINGS
(TA = 25°C unless otherwise noted, common for Q1 and Q2, – minus sign for Q1 (PNP) omitted)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Symbol
VCBO
VCEO
IC
R
θJA
TJ, Tstg
PD
Marking
11
12
13
14
15
16
30
31
32
33
34
35
R1 (K)
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
Value
50
50
100
Unit
Vdc
Vdc
mAdc
°C/W
°C
mW
THERMAL CHARACTERISTICS
Thermal Resistance — Junction-to-Ambient (surface mounted)
Operating and Storage Temperature Range
Total Package Dissipation @ TA = 25°C(1)
833
– 65 to +150
*150
DEVICE MARKING AND RESISTOR VALUES: MUN5311DW1T1 SERIES
Device
MUN5311DW1T1
MUN5312DW1T1
MUN5313DW1T1
MUN5314DW1T1
MUN5315DW1T1(2)
MUN5316DW1T1(2)
MUN5330DW1T1(2)
MUN5331DW1T1(2)
MUN5332DW1T1(2)
MUN5333DW1T1(2)
MUN5334DW1T1(2)
MUN5335DW1T1(2)
R2 (K)
10
22
47
47
1.0
2.2
4.7
47
47
47
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
2. New resistor combinations. Updated curves to follow in subsequent data sheets.
Thermal Clad is a trademark of the Bergquist Company
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 5
Motorola Small–Signal Transistors, FETs and Diodes Device Data
©
Motorola, Inc. 1997
1

MUN5316DW1T2 Related Products

MUN5316DW1T2 MUN5312DW1T3
Description 100mA, 50V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, CASE 419B-01, 6 PIN 100mA, 50V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, CASE 419B-01, 6 PIN
Maker ON Semiconductor ON Semiconductor
package instruction SMALL OUTLINE, R-PDSO-G6 CASE 419B-01, 6 PIN
Contacts 6 6
Manufacturer packaging code CASE 419B-01 CASE 419B-01
Reach Compliance Code unknown not_compliant
ECCN code EAR99 EAR99
Maximum collector current (IC) 0.1 A 0.1 A
Collector-emitter maximum voltage 50 V 50 V
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 160 60
JESD-30 code R-PDSO-G6 R-PDSO-G6
Number of components 2 2
Number of terminals 6 6
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Polarity/channel type NPN AND PNP NPN AND PNP
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
Transistor component materials SILICON SILICON
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