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IRFS41N15DTRRP

Description
Power Field-Effect Transistor, 41A I(D), 150V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, D2PAK-3
CategoryDiscrete semiconductor    The transistor   
File Size255KB,12 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Environmental Compliance
Download Datasheet Parametric View All

IRFS41N15DTRRP Overview

Power Field-Effect Transistor, 41A I(D), 150V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, D2PAK-3

IRFS41N15DTRRP Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInternational Rectifier ( Infineon )
package instructionLEAD FREE, D2PAK-3
Contacts3
Reach Compliance Codenot_compliant
ECCN codeEAR99
Other featuresAVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)470 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage150 V
Maximum drain current (ID)41 A
Maximum drain-source on-resistance0.045 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)164 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn) - with Nickel (Ni) barrier
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
PD - 93804B
Applications
l
High frequency DC-DC converters
HEXFET
®
Power MOSFET
IRFB41N15D
IRFIB41N15D
IRFS41N15D
IRFSL41N15D
V
DSS
R
DS(on)
max
Benefits
l
l
l
Low Gate-to-Drain Charge to Reduce
Switching Losses
Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design, (See
App. Note AN1001)
Fully Characterized Avalanche Voltage
and Current
150V
0.045
:
I
D
41A
TO-220AB TO-220 FullPak
D
2
Pak
TO-262
IRFB41N15D IRFIB41N15D IRFS41N15D IRFSL41N15D
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C
= 25°C
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
Max.
41
29
164
3.1
200
48
1.3
0.32
± 30
2.7
-55 to + 175
Units
A
W
c
Power Dissipation, D Pak
Power Dissipation, TO-220
Power Dissipation, Fullpak
Linear Derating Factor, TO-220
Linear Derating Factor, Fullpak
2
W/°C
V
V/ns
°C
V
GS
dv/dt
T
J
T
STG
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
e
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
300 (1.6mm from case )
1.1(10)
N•m (lbf•in)
Thermal Resistance
Parameter
R
θJC
R
θJC
R
θcs
R
θJA
R
θJA
R
θJA
Junction-to-Case
Junction-to-Case, Fullpak
Case-to-Sink, Flat, Greased Surface
Typ.
–––
–––
0.50
–––
–––
–––
Max.
0.75
3.14
–––
62
40
65
Units
°C/W
h
Junction-to-Ambient, D Pak
i
Junction-to-Ambient, TO-220
2
h
Junction-to-Ambient, Fullpak
Notes

through
‡
are on page 12
www.irf.com
1
07/16/03
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