20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.SA
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
PIN Diodes for RF Switching
and Attenuating
Technical Data
1N5719, 1N5767,
5082-3001, 5082-3039,
5082-3077, 5082-3080/81,
5082-3188, 5082-3379
Features
• Low Harmonic Distortion
• Large Dynamic Range
• Low Series Resistance
• Low Capacitance
Description/Applications
These general purpose switching
diodes are intended for low
power switching applications
such as RF duplexers. antenna
switching matrices, digital phase
shifters, and time multiplex
filters. The 5082-3188 is
optimized for VHF/UHF
bandswitching.
The RF resistance of a PIN diode
is a function of the current
flowing in the diode. These
current controlled resistors are
specified for use in control
applications such as variable RF
attenuators, automatic gain
control circuits, RF modulators,
electrically tuned filters, analog
phase shifters, and RF limiters.
Outline 15 diodes are available on
tape and reel. The tape and reel
specification is patterned after
RS-296-D.
25.4(1.00)
WIN.
1.93 (.0761
1.73 (.068)
CATHODE
25.4(1.00)
MIN.
DIMENSIONS IN MILLIMETERS AND (INCHES).
Outline 15
Maximum Ratings
Junction Operating and
Storage Temperature Range
Power Dissipation 25°C
(Derate linearly to zero at t50°C)
Peak Inverse Voltage (PIV)
Maximum Soldering Temperature
-G5°C to +150°C
250 mW
same as VBR
260
U
C for 5 sec
NJ Semi-Condiictors reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However NJ
Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages
customers 10 verifv that datasheets are current before placing orders.
General Purpose Diodes
Electrical Specifications at T
A
= 25°C
Minimum
Part
Breakdown
Number
Voltage
5082-
VBR (V)
General Pu rpose Switching arid Attenuating
3001
0.25
200
150
0.25
3039
0.3**
150
1N5719
0.3
200
3077
Band Switt King
3188
1.0*
35
V
R
= 50 V
Test
V
R
= V
BR
Conditions
Measure
*V
R
= 20 V
**V
R
= 100 V
I
R
< 10 ^A
f= 1 MHz
Notes:
Maximum
Total
Capacitance
C
T
(
P
F)
Maximum
Residual Series
Resistance
RS(«)
Effective Carrier Reverse Recovery
Lifetime
Time
t (ns)
t
rr
(ns)
100 (typ.)
100 (typ.)
100 (typ.)
100 (typ)
12 (typ.)
I
F
= 20 mA
V
H
=10V
90% Recovery
1.0
1.25
1.25
1.5
0.6**
I
F
= 100mA
*I
F
= 20 mA
**I
F
= 10mA
f = 100 MHz
100 (min.)
100 (min.)
100 (min.)
100 (min.)
70 (typ.)*
I
F
= 50 mA
I
u
= 250 mA
*I
F
= 10 mA
*T
R
= 6 mA
Typical CW power switching capability for a shunt switch in a 50 Q system is 2.5 W.
RF Current Controlled Resistor Diodes
Electrical Specifications at T
A
= 25°C
Max.
Part
Number
5082-3080
1N5767*
5082-3379
5082-3081
Min.
Effective
Residual
Max.
Breakdown
Series
Carrier
Total
Voltage Resistance Capacitance
Lifetime
t (ns)
C
T
(pF)
VBR W
R
s
(f»
0,4
1300 (typ.)
100
2.5
1300 (typ.)
100
0.4
2.5
1300 (typ.)
50
0.4
3.5
0.4
2500 (typ.)
100
V
R
= 50 V
f = 1MHz
High
, Resistance
Limit, R
H
(W)
Low
Resistance
Limit, R
L
(W)
Min.
Difference
Max.
in
Min.
1000
1000
1500
Max.
Max.
8**
8**
8**
8**
Resistance
vs. Bias
Slope, DC
Test
I
F
= 50 mA
V
R
= V
BR
,
I
F
= 100 mA
Conditions
I
R
= 250 mA
Measure
f = 100 MHz
IR ^
10
H
A
IF = 0.01 mA
f = 100 MHz
I
F
= 1.0mA
Batch
IP = 20 mA** Matched at
f= 100 MHz IP = 0.01 mA
and 1.0 mA
f= 100 MHz
"The IN5767 has the additional specifications:
T = 1.0 msec minimum
IR = 1 uA maximum at VR = 50 V
VF = 1 V maximum at IF = 100 mA,
RF/Wirelessly
京公网安备 11010802033920号
EEWORLD
