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AT49LV002NT-70TJ

Description
Flash, 256KX8, 70ns, PDSO32, 8 X 20 MM, PLASTIC, TSOP1-32
Categorystorage    storage   
File Size481KB,13 Pages
ManufacturerAtmel (Microchip)
Environmental Compliance
Download Datasheet Parametric View All

AT49LV002NT-70TJ Overview

Flash, 256KX8, 70ns, PDSO32, 8 X 20 MM, PLASTIC, TSOP1-32

AT49LV002NT-70TJ Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerAtmel (Microchip)
Parts packaging codeTSOP1
package instruction8 X 20 MM, PLASTIC, TSOP1-32
Contacts32
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum access time70 ns
startup blockTOP
JESD-30 codeR-PDSO-G32
JESD-609 codee3
length18.4 mm
memory density2097152 bit
Memory IC TypeFLASH
memory width8
Humidity sensitivity level3
Number of functions1
Number of terminals32
word count262144 words
character code256000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize256KX8
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP1
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
Programming voltage3 V
Certification statusNot Qualified
Maximum seat height1.2 mm
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceMATTE TIN
Terminal formGULL WING
Terminal pitch0.5 mm
Terminal locationDUAL
Maximum time at peak reflow temperature30
typeNOR TYPE
width8 mm
Base Number Matches1
Features
Single-voltage Operation
– 5V Read
– 5V Reprogramming
Fast Read Access Time – 55 ns
Internal Program Control and Timer
16-Kbyte Boot Block with Lockout
Fast Erase Cycle Time – 10 seconds
Byte-by-byte Programming – 50 µs/Byte
Hardware Data Protection
DATA Polling for End of Program Detection
Low Power Dissipation
– 50 mA Active Current
– 100 µA CMOS Standby Current
Typical 10,000 Write Cycles
Description
The AT49F040 is a 5-volt-only in-system Flash Memory. Its 4 megabits of memory is
organized as 524,288 words by 8 bits. Manufactured with Atmel’s advanced nonvola-
tile CMOS technology, the device offers access times to 55 ns with power dissipation
of just 275 mW over the commercial temperature range. When the device is dese-
lected, the CMOS standby current is less than 100 µA.
The device contains a user-enabled “boot block” protection feature. The AT49F040
locates the boot block at lowest order addresses (“bottom boot”).
(continued)
4-megabit
(512K x 8)
5-volt Only
Flash Memory
AT49F040
Not Recommended
for New Design
Contact
Atmel to discuss
the latest design in trends
and options
Pin Configurations
Pin Name
A0 - A18
CE
OE
WE
I/O0 - I/O7
Function
Addresses
Chip Enable
Output Enable
Write Enable
Data Inputs/Outputs
DIP Top View
A18
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
VCC
WE
A17
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
TSOP Top View
Type 1
A11
A9
A8
A13
A14
A17
WE
VCC
A18
A16
A15
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
A3
PLCC Top View
4
3
2
1
32
31
30
A12
A15
A16
A18
VCC
WE
A17
I/O1
I/O2
GND
I/O3
I/O4
I/O5
I/O6
14
15
16
17
18
19
20
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
5
6
7
8
9
10
11
12
13
29
28
27
26
25
24
23
22
21
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
Rev. 0998D–03/01
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