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M5M5256DVP-70VLL

Description
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM
Categorystorage    storage   
File Size37KB,7 Pages
ManufacturerMitsubishi
Websitehttp://www.mitsubishielectric.com/semiconductors/
Download Datasheet Parametric View All

M5M5256DVP-70VLL Overview

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

M5M5256DVP-70VLL Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMitsubishi
Parts packaging codeTSOP
package instructionTSOP1, TSSOP28,.53,22
Contacts28
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum access time70 ns
I/O typeCOMMON
JESD-30 codeR-PDSO-G28
JESD-609 codee0
length11.8 mm
memory density262144 bi
Memory IC TypeSTANDARD SRAM
memory width8
Number of functions1
Number of ports1
Number of terminals28
word count32768 words
character code32000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize32KX8
Output characteristics3-STATE
ExportableYES
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP1
Encapsulate equivalent codeTSSOP28,.53,22
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply3.3 V
Certification statusNot Qualified
Maximum seat height1.2 mm
Maximum standby current0.00001 A
Minimum standby current2 V
Maximum slew rate0.025 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch0.55 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width8 mm
'97.4.7
MITSUBISHI LSIs
M5M5256DFP,VP,RV -70VLL,-85VLL,
-70VXL,-85VXL
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM
DESCRIPTION
The M5M5256DFP,VP,RV is 262,144-bit CMOS static RAMs
organized as 32,768-words by 8-bits which is fabricated using
high-performance 3 polysilicon CMOS technology. The use of
resistive load NMOS cells and CMOS periphery results in a high
density and low power static RAM. Stand-by current is small
enough for battery back-up application. It is ideal for the memory
systems which require simple interface.
Especially the M5M5256DVP,RV are packaged in a 28-pin thin
small outline package.Two types of devices are available,
M5M5256DVP(normal lead bend type package),
M5M5256DRV(reverse lead bend type package). Using both types of
devices, it becomes very easy to design a printed circuit board.
PIN CONFIGURATION (TOP VIEW)
A14
A12
1
2
A7
3
A6
4
A5
5
A4
6
7
A3
A2
8
A1
9
A0
10
DQ1 11
DQ2 12
DQ3 13
GND 14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
Vcc
/W
A13
A8
A9
A11
/OE
A10
/S
DQ8
DQ7
DQ6
DQ5
DQ4
M5M5256DFP
FEATURE
Type
Access Power supply current
time
Active Stand-by
(max)
(max)
(max)
70ns
12µA
M5M5256DFP,VP,RV-85VLL
85ns
25mA
(Vcc=3.6V)
(Vcc=3.6V)
Outline 28P2W-C (DFP)
22 /OE
23 A11
24 A9
25 A8
26 A13
27 /W
28Vcc
1 A14
2 A12
3 A7
4 A6
5 A5
6 A4
7 A3
A10 21
/S 20
DQ8 19
DQ7 18
DQ6 17
DQ5 16
DQ415
GND 14
DQ3 13
DQ2 12
DQ1 11
A0 10
A1 9
A2 8
M5M5256DFP,VP,RV-70VLL
M5M5256DFP,VP,RV-70VXL
M5M5256DFP,VP,RV-85VXL
70ns
85ns
2.4µA
(Vcc=3.6V)
0.05µA
(Vcc=3.0V,
Typical)
M5M5256DVP
•Single +3.3±0.3V power supply
•No clocks, no refresh
•Data-Hold on +2.0V power supply
•Directly TTL compatible : all inputs and outputs
•Three-state outputs : OR-tie capability
•/OE prevents data contention in the I/O bus
•Common Data I/O
•Battery backup capability
•Low stand-by current··········0.05µA(typ.)
Outline 28P2C-A (DVP)
PACKAGE
M5M5256DFP
: 28 pin 450 mil SOP
M5M5256DVP,RV : 28pin 8 X 13.4 mm
2
TSOP
APPLICATION
Small capacity memory units
7 A3
6 A4
5 A5
4 A6
3 A7
2 A12
1 A14
28 Vcc
27 /W
26 A13
25 A8
24 A9
23 A11
22 /OE
M5M5256DRV
A2 8
A1 9
A0 10
DQ1 11
DQ2 12
DQ3 13
GND 14
DQ4 15
DQ5 16
DQ6 17
DQ7 18
DQ8 19
/S 20
A10 21
Outline 28P2C-B (DRV)
MITSUBISHI
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