FX6UMJ-3 datasheet, PDF - EEWORLD Datasheet

FX6UMJ-3: DescriptionPower Field-Effect Transistor, 6A I(D), 150V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB; CategoryDiscrete semiconductor The transistor; File Size326KB，7 Pages; ManufacturerPOWEREX; Websitehttp://www.pwrx.com/Home.aspx

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FX6UMJ-3 Overview

Power Field-Effect Transistor, 6A I(D), 150V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	POWEREX
package instruction	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	DRAIN
Configuration	SINGLE
Minimum drain-source breakdown voltage	150 V
Maximum drain current (Abs) (ID)	6 A
Maximum drain current (ID)	6 A
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	P-CHANNEL
Maximum power dissipation(Abs)	45 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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