Bus Driver, HCT Series, 1-Func, 8-Bit, True Output, CMOS, CDFP20
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | Harris |
| package instruction | DFP, FL20,.3 |
| Reach Compliance Code | unknown |
| Other features | RADIATION HARD CMOS/SILICON ON SAPPHIRE (SOS) TECHONOLOGY |
| series | HCT |
| JESD-30 code | R-CDFP-F20 |
| JESD-609 code | e0 |
| Load capacitance (CL) | 50 pF |
| Logic integrated circuit type | BUS DRIVER |
| MaximumI(ol) | 0.006 A |
| Number of digits | 8 |
| Number of functions | 1 |
| Number of ports | 2 |
| Number of terminals | 20 |
| Maximum operating temperature | 125 °C |
| Minimum operating temperature | -55 °C |
| Output characteristics | 3-STATE |
| Output polarity | TRUE |
| Package body material | CERAMIC, METAL-SEALED COFIRED |
| encapsulated code | DFP |
| Encapsulate equivalent code | FL20,.3 |
| Package shape | RECTANGULAR |
| Package form | FLATPACK |
| power supply | 5 V |
| Prop。Delay @ Nom-Sup | 34 ns |
| propagation delay (tpd) | 34 ns |
| Certification status | Not Qualified |
| Filter level | 38535V;38534K;883S |
| Maximum supply voltage (Vsup) | 5.5 V |
| Minimum supply voltage (Vsup) | 4.5 V |
| Nominal supply voltage (Vsup) | 5 V |
| surface mount | YES |
| technology | CMOS |
| Temperature level | MILITARY |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | FLAT |
| Terminal pitch | 1.27 mm |
| Terminal location | DUAL |
| total dose | 200k Rad(Si) V |
| Base Number Matches | 1 |
| HCTS373KMSR | 5962R9574701VXC | 5962R9574701VRC | HCTS373DMSR | HCTS373HMSR | |
|---|---|---|---|---|---|
| Description | Bus Driver, HCT Series, 1-Func, 8-Bit, True Output, CMOS, CDFP20 | Bus Driver, HCT Series, 1-Func, 8-Bit, True Output, CMOS, CDFP20 | Bus Driver, HCT Series, 1-Func, 8-Bit, True Output, CMOS, CDIP20 | Bus Driver, HCT Series, 1-Func, 8-Bit, True Output, CMOS, CDIP20 | Bus Driver, HCT Series, 1-Func, 8-Bit, True Output, CMOS |
| package instruction | DFP, FL20,.3 | , | , | DIP, DIP20,.3 | DIE, |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown |
| series | HCT | HCT | HCT | HCT | HCT |
| JESD-30 code | R-CDFP-F20 | R-CDFP-F20 | R-CDIP-T20 | R-CDIP-T20 | X-XUUC-N20 |
| Load capacitance (CL) | 50 pF | 50 pF | 50 pF | 50 pF | 50 pF |
| Logic integrated circuit type | BUS DRIVER | BUS DRIVER | BUS DRIVER | BUS DRIVER | BUS DRIVER |
| Number of digits | 8 | 8 | 8 | 8 | 8 |
| Number of functions | 1 | 1 | 1 | 1 | 1 |
| Number of ports | 2 | 2 | 2 | 2 | 2 |
| Number of terminals | 20 | 20 | 20 | 20 | 20 |
| Maximum operating temperature | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C |
| Minimum operating temperature | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C |
| Output characteristics | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| Output polarity | TRUE | TRUE | TRUE | TRUE | TRUE |
| Package body material | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | UNSPECIFIED |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | UNSPECIFIED |
| Package form | FLATPACK | FLATPACK | IN-LINE | IN-LINE | UNCASED CHIP |
| propagation delay (tpd) | 34 ns | 34 ns | 34 ns | 34 ns | 34 ns |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| Maximum supply voltage (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
| Minimum supply voltage (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| Nominal supply voltage (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V |
| surface mount | YES | YES | NO | NO | YES |
| technology | CMOS | CMOS | CMOS | CMOS | CMOS |
| Temperature level | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY |
| Terminal form | FLAT | FLAT | THROUGH-HOLE | THROUGH-HOLE | NO LEAD |
| Terminal location | DUAL | DUAL | DUAL | DUAL | UPPER |
| Base Number Matches | 1 | 1 | 1 | 1 | 1 |
| Maker | Harris | - | - | Harris | Harris |
| JESD-609 code | e0 | e4 | e4 | e0 | - |
| encapsulated code | DFP | - | - | DIP | DIE |
| Terminal surface | Tin/Lead (Sn/Pb) | GOLD | GOLD | Tin/Lead (Sn/Pb) | - |
| total dose | 200k Rad(Si) V | 100k Rad(Si) V | 100k Rad(Si) V | 200k Rad(Si) V | - |
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