Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 4 PIN
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | Infineon |
| Parts packaging code | TO-220AB |
| package instruction | TO-220AB, 4 PIN |
| Contacts | 3 |
| Reach Compliance Code | unknown |
| Avalanche Energy Efficiency Rating (Eas) | 320 mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 400 V |
| Maximum drain current (ID) | 5.5 A |
| Maximum drain-source on-resistance | 1 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | R-PSSO-G3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Operating mode | ENHANCEMENT MODE |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Polarity/channel type | N-CHANNEL |
| Maximum pulsed drain current (IDM) | 22 A |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal form | GULL WING |
| Terminal location | SINGLE |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Base Number Matches | 1 |
| BUZ60-E3044 | BUZ60-E3046 | BUZ60-E3045 | |
|---|---|---|---|
| Description | Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 4 PIN | Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN | Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN |
| Maker | Infineon | Infineon | Infineon |
| Parts packaging code | TO-220AB | TO-220AB | TO-220AB |
| package instruction | TO-220AB, 4 PIN | IN-LINE, R-PSIP-T3 | SMALL OUTLINE, R-PSSO-G2 |
| Contacts | 3 | 3 | 3 |
| Reach Compliance Code | unknown | unknown | unknown |
| Avalanche Energy Efficiency Rating (Eas) | 320 mJ | 320 mJ | 320 mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 400 V | 400 V | 400 V |
| Maximum drain current (ID) | 5.5 A | 5.5 A | 5.5 A |
| Maximum drain-source on-resistance | 1 Ω | 1 Ω | 1 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | R-PSSO-G3 | R-PSIP-T3 | R-PSSO-G2 |
| Number of components | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 2 |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | SMALL OUTLINE | IN-LINE | SMALL OUTLINE |
| Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| Maximum pulsed drain current (IDM) | 22 A | 22 A | 22 A |
| Certification status | Not Qualified | Not Qualified | Not Qualified |
| surface mount | YES | NO | YES |
| Terminal form | GULL WING | THROUGH-HOLE | GULL WING |
| Terminal location | SINGLE | SINGLE | SINGLE |
| transistor applications | SWITCHING | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON | SILICON |
| Base Number Matches | 1 | 1 | 1 |
| JESD-609 code | - | e3 | e3 |
| Terminal surface | - | MATTE TIN | MATTE TIN |
京公网安备 11010802033920号
EEWORLD
