BCX55-16BK datasheet, PDF - EEWORLD Datasheet

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BCX55-16BK: DescriptionPower Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size90KB，2 Pages; ManufacturerCentral Semiconductor

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BCX55-16BK Overview

Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3

BCX55-16BK Parametric

Parameter Name	Attribute value
package instruction	PLASTIC PACKAGE-3
Contacts	3
Reach Compliance Code	compliant
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	1 A
Collector-emitter maximum voltage	60 V
Configuration	SINGLE
Minimum DC current gain (hFE)	100
JESD-30 code	R-PSSO-F3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Maximum power dissipation(Abs)	1.2 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	TIN LEAD
Terminal form	FLAT
Terminal location	SINGLE
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	130 MHz
Base Number Matches	1

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BCX54

BCX55

BCX56

SURFACE MOUNT

NPN SILICON TRANSISTOR

Central

TM

Semiconductor Corp.

DESCRIPTION:

The CENTRAL SEMICONDUCTOR BCX54,

BCX55, and BCX56 types are NPN Silicon

Transistors manufactured by the epitaxial planar

process, epoxy molded in a surface mount

package, designed for high current general

purpose amplifier applications.

MARKING CODE:

(SEE TABLE ON FOLLOWING PAGE)

SYMBOL

VCBO

VCEO

VEBO

IC

ICM

IB

IBM

PD

TJ, Tstg

Θ

JA

BCX54

45

BCX55

BCX56

60

100

60

80

5.0

1.0

1.5

100

200

1.3

-65 to +150

96

UNITS

V

A

mA

W

°C

°C/W

SOT-89 CASE

MAXIMUM RATINGS:

(TA=25°C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Peak Collector Current

Base Current

Peak Base Current

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

ELECTRICAL CHARACTERISTICS:

(TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

ICBO

VCB=30V

ICBO

VCB=30V, TA=125°C

IEBO

VEB=5.0V

BVCBO

IC=100μA (BCX54)

45

BVCBO

IC=100μA (BCX55)

60

BVCBO

IC=100μA (BCX56)

100

BVCEO

IC=10mA (BCX54)

45

BVCEO

IC=10mA (BCX55)

60

BVCEO

IC=10mA (BCX56)

80

VCE(SAT)

IC=500mA, IB=50mA

VBE(ON)

VCE=2.0V, IC=500mA

VCE=2.0V, IC=5.0mA

40

hFE

VCE=2.0V, IC=150mA

63

hFE

VCE=2.0V, IC=150mA

(BCX54-10, BCX55-10, BCX56-10)

63

hFE

VCE=2.0V, IC=150mA

(BCX54-16, BCX55-16, BCX56-16)

100

hFE

VCE=2.0V, IC=500mA

25

fT

VCE=5.0V, IC=10mA, f=100MHz

TYP

MAX

100

10

100

0.5

1.0

250

160

250

130

UNITS

nA

μA

nA

V

MHz

R4 (30-July 2008)

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Shortcut: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

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