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IRFF112

Description
3A, 100V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
CategoryDiscrete semiconductor    The transistor   
File Size829KB,8 Pages
ManufacturerRochester Electronics
Websitehttps://www.rocelec.com/
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IRFF112 Overview

3A, 100V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF

IRFF112 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerRochester Electronics
Reach Compliance Codeunknown
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage100 V
Maximum drain current (ID)3 A
Maximum drain-source on-resistance0.8 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-205AF
JESD-30 codeO-MBCY-W3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)12 A
Certification statusCOMMERCIAL
surface mountNO
Terminal surfaceTIN LEAD
Terminal formWIRE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
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IRFF112 Related Products

IRFF112 IRFF111
Description 3A, 100V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF 3.5A, 80V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
Is it lead-free? Contains lead Contains lead
Is it Rohs certified? incompatible incompatible
Maker Rochester Electronics Rochester Electronics
Reach Compliance Code unknown unknown
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 100 V 80 V
Maximum drain current (ID) 3 A 3.5 A
Maximum drain-source on-resistance 0.8 Ω 0.6 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-205AF TO-205AF
JESD-30 code O-MBCY-W3 O-MBCY-W3
JESD-609 code e0 e0
Number of components 1 1
Number of terminals 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Package body material METAL METAL
Package shape ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 12 A 14 A
Certification status COMMERCIAL COMMERCIAL
surface mount NO NO
Terminal surface TIN LEAD TIN LEAD
Terminal form WIRE WIRE
Terminal location BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
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