FPN560 / FPN560A
FPN560
FPN560A
C
TO-226
B
E
NPN Low Saturation Transistor
These devices are designed for high current gain and low
saturation voltage with collector currents up to 3.0 A continuous.
Sourced from Process NA.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
- Continuous
Collector-Emitter Voltage
TA = 25°C unless otherwise noted
Parameter
Value
60
80
5.0
3.0
-55 to +150
Units
V
V
V
A
°C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJC
R
θJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max
FPN560 / FPN560A
1.0
50
125
Units
W
°C/W
°C/W
1999 Fairchild Semiconductor Corporation
FPN560 / FPN560A
NPN Low Saturation Transistor
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
EBO
Collector-Emitter Breakdown
Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
I
C
= 10 mA, I
B
= 0
I
C
= 100
µA,
I
E
= 0
I
E
= 100
µA,
I
C
= 0
V
CB
= 30 V, I
E
= 0
V
CB
= 30 V, I
E
= 0, T
A
= 100°C
V
EB
= 4.0 V, I
C
= 0
60
80
5.0
100
10
100
V
V
V
nA
µA
nA
ON CHARACTERISTICS*
h
FE
DC Current Gain
I
C
= 100 mA, V
CE
= 2.0 V
I
C
= 500 mA, V
CE
= 2.0 V
I
C
= 1.0 A, V
CE
= 2.0 V
I
C
= 2.0 A, V
CE
= 2.0 V
I
C
= 1.0 A, I
B
= 100 mA
I
C
= 2.0 A, I
B
= 200 mA
I
C
= 1.0 A, I
B
= 100 mA
I
C
= 1.0 A, V
CE
= 2.0 V
560
560A
70
100
250
80
40
300
550
V
CE(
sat
)
Collector-Emitter Saturation Voltage
560
560A
V
BE(
sat
)
V
BE(
on
)
Base-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
300
350
300
1.25
1.0
mV
mV
mV
V
V
SMALL SIGNAL CHARACTERISTICS
C
obo
F
T
Output Capacitance
Transition Frequency
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
I
C
= 100 mA, V
CE
= 5.0 V,
f = 100 MHz
75
30
pF
MHz
*
Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2.0%
FPN560 / FPN560A
NPN Low Saturation Transistor
(continued)
Typical Characteristics
V
BESAT
-BASE-EMITTER SATURATION VOLTAGE(V)
1.4
1.2
1
V
BEON
- BASE-EMITTER ON VOLTAGE (V)
Base-Emitter Saturation
Voltage vs Collector Current
β = 10
Base-Emitter On Voltage vs.
Collector Current
1.4
V
ce
= 2.0V
1.2
1
- 40 °C
- 40 °C
0.8
0.6
0.4
0.2
0.001
25 °C
0.8
0.6
0.4
0.2
0.0001
25 °C
125 °C
125 °C
0.01
0.1
1
I
C
- COLLECTOR CURRENT (A)
10
0.001
0.01
0.1
1
I
C
- COLLECTOR CURRENT (A)
10
V
CESAT
- COLLECTOR-EMITTER VOLTAGE (V)
Collector-Emitter Saturation
Voltage vs Collector Current
0.8
β = 10
Input/Output Capacitance vs.
Reverse Bias Voltage
450
400
CAPACITANCE (pf)
350
300
250
200
150
100
50
C
obo
C
ibo
f = 1.0 MHz
0.6
125°C
25°C
0.4
- 40°C
0.2
0
0.001
0.01
0.1
1
I
C
- COLLECTOR CURRENT (A)
10
0
0.1
0.2
0.5 1
2
5
10 20
V
CE
- COLLECTOR VOLTAGE (V)
50
100
Current Gain vs. Collector Current
500
125°C
V
ce
= 2.0V
Power Dissipation vs
Ambient Temperature
P
D
- POWE R DIS SIPATION (W)
1
H
FE
- CURRENT GAIN
400
TO-226
0.75
300
25°C
200
0.5
- 40°C
100
0.25
0
0.0001
0.001
0.01
0.1
1 2
I
C
- COLLECTOR CURRENT (A)
5
0
0
25
50
75
100
TE MPE RATURE (
°
C)
125
150
TO-226AE Tape and Reel Data
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©2000 Fairchild Semiconductor International
October 1999, Rev. A1
TO-226AE Tape and Reel Data, continued
TO-226AE Reeling Style
Configuration:
Fi gure 2.0
Machine Option "A" (H)
Machine Option "E"(J)
Style "A" D26Z, D70Z (s/h)
Style "E" D 27Z, D71Z (s/h)
TO-226AE Radial Ammo Packaging
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ORDER STYLE
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ORDER STYLE
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October 1999, Rev. A1
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