ASI10784 datasheet, PDF - EEWORLD Datasheet

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ASI10784: DescriptionRF Power Bipolar Transistor, Ultra High Frequency Band, Silicon, NPN,; CategoryDiscrete semiconductor The transistor; File Size14KB，1 Pages; ManufacturerAdvanced Semiconductor, Inc.

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ASI10784 Overview

RF Power Bipolar Transistor, Ultra High Frequency Band, Silicon, NPN,

ASI10784 Parametric

Parameter Name	Attribute value
Maker	Advanced Semiconductor, Inc.
package instruction	POST/STUD MOUNT, O-CRPM-F4
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	1 A
Collector-based maximum capacity	10 pF
Collector-emitter maximum voltage	24 V
highest frequency band	ULTRA HIGH FREQUENCY BAND
JESD-30 code	O-CRPM-F4
Number of terminals	4
Maximum operating temperature	200 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	ROUND
Package form	POST/STUD MOUNT
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal form	FLAT
Terminal location	RADIAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Base Number Matches	1

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BLX96

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

The

BLX96

is Designed for Class A

Television Band IV- V Amplifier

Applications Requiring High Linearity.

PACKAGE STYLE .280 4L STUD

A

45°

C

B

E

B

D

C

FEATURES:

•

P

G

= 7.0 dB Typical at 860 MHz

•

IMD

3

= -63 dBc Typ. at P

REF

= 0.5 W

•

Omnigold™

Metallization System

E

J

E

F

G

I

MAXIMUM RATINGS

I

C

V

CB

P

DISS

T

J

T

STG

θ

JC

1.0 A

45 V

16 W @ T

C

= 25 C

-65 C to +200 C

-65 C to +150 C

11 C/W

O

DIM

A

B

C

D

E

F

G

H

I

J

K

.175 / 4.45

.275 / 6.99

.245 / 6.22

MINIMUM

inches / mm

H

K

#8-32 UNC

MAXIMUM

inches / mm

1.010 / 25.65

.220 / 5.59

.270 / 6.86

.003 / 0.08

.117 / 2.97

.572 / 14.53

.130 / 3.30

1.055 / 26.80

.230 /5.84

.285 / 7.24

.007 / 0.18

.137 / 3.48

.255 / 6.48

.640 / 16.26

.217 / 5.51

.285 / 7.24

ORDER CODE: ASI10784

CHARACTERISTICS

SYMBOL

BV

CEO

BV

CER

BV

CBO

BV

EBO

h

FE

C

OB

P

G

IMD

3

I

C

= 40 mA

I

C

= 40 mA

I

C

= 2 mA

I

E

= 0.5 mA

V

CE

= 20 V

V

CB

= 20 V

T

C

= 25 C

O

TEST CONDITIONS

R

BE

= 10

Ω

MINIMUM TYPICAL MAXIMUM

24

50

45

3.5

UNITS

V

I

C

= 250 mA

f = 1.0 MHz

20

150

10

---

pF

dB

V

CE

= 25 V

I

C

= 250 mA

P

REF

= 0.5 W

F = 860 MHz

Vision = -8.0 dB Sound = -7.0 dB Chroma = -16 dB

6.0

7.0

-60

dBc

A D V A N C E D S E M I C O N D U C T O R, I N C.

7525 ETHEL AVENUE

•

NORTH HOLLYWOOD, CA 91605

•

(818) 982-1200

•

FAX (818) 765-3004

Specifications are subject to change without notice.

REV. A

1/1

ASI10784 Related Products

	ASI10784	BLX96
Description	RF Power Bipolar Transistor, Ultra High Frequency Band, Silicon, NPN,	RF Power Bipolar Transistor, Ultra High Frequency Band, Silicon, NPN,
Maker	Advanced Semiconductor, Inc.	Advanced Semiconductor, Inc.
package instruction	POST/STUD MOUNT, O-CRPM-F4	POST/STUD MOUNT, O-CRPM-F4
Reach Compliance Code	unknown	unknown
ECCN code	EAR99	EAR99
Maximum collector current (IC)	1 A	1 A
Collector-based maximum capacity	10 pF	10 pF
Collector-emitter maximum voltage	24 V	24 V
highest frequency band	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND
JESD-30 code	O-CRPM-F4	O-CRPM-F4
Number of terminals	4	4
Maximum operating temperature	200 °C	200 °C
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
Package shape	ROUND	ROUND
Package form	POST/STUD MOUNT	POST/STUD MOUNT
Polarity/channel type	NPN	NPN
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal form	FLAT	FLAT
Terminal location	RADIAL	RADIAL
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON
Base Number Matches	1	1

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