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BLX96

Description
RF Power Bipolar Transistor, Ultra High Frequency Band, Silicon, NPN,
CategoryDiscrete semiconductor    The transistor   
File Size14KB,1 Pages
ManufacturerAdvanced Semiconductor, Inc.
Download Datasheet Parametric Compare View All

BLX96 Overview

RF Power Bipolar Transistor, Ultra High Frequency Band, Silicon, NPN,

BLX96 Parametric

Parameter NameAttribute value
MakerAdvanced Semiconductor, Inc.
package instructionPOST/STUD MOUNT, O-CRPM-F4
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)1 A
Collector-based maximum capacity10 pF
Collector-emitter maximum voltage24 V
ConfigurationSingle
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeO-CRPM-F4
Number of terminals4
Maximum operating temperature200 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formPOST/STUD MOUNT
Polarity/channel typeNPN
Maximum power dissipation(Abs)6.3 W
Certification statusNot Qualified
surface mountNO
Terminal formFLAT
Terminal locationRADIAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1
BLX96
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
BLX96
is Designed for Class A
Television Band IV- V Amplifier
Applications Requiring High Linearity.
PACKAGE STYLE .280 4L STUD
A
45°
C
B
E
B
D
C
FEATURES:
P
G
= 7.0 dB Typical at 860 MHz
IMD
3
= -63 dBc Typ. at P
REF
= 0.5 W
Omnigold™
Metallization System
E
J
E
F
G
I
MAXIMUM RATINGS
I
C
V
CB
P
DISS
T
J
T
STG
θ
JC
1.0 A
45 V
16 W @ T
C
= 25 C
-65 C to +200 C
-65 C to +150 C
11 C/W
O
O
O
O
O
O
DIM
A
B
C
D
E
F
G
H
I
J
K
.175 / 4.45
.275 / 6.99
.245 / 6.22
MINIMUM
inches / mm
H
K
#8-32 UNC
MAXIMUM
inches / mm
1.010 / 25.65
.220 / 5.59
.270 / 6.86
.003 / 0.08
.117 / 2.97
.572 / 14.53
.130 / 3.30
1.055 / 26.80
.230 /5.84
.285 / 7.24
.007 / 0.18
.137 / 3.48
.255 / 6.48
.640 / 16.26
.217 / 5.51
.285 / 7.24
ORDER CODE: ASI10784
CHARACTERISTICS
SYMBOL
BV
CEO
BV
CER
BV
CBO
BV
EBO
h
FE
C
OB
P
G
IMD
3
I
C
= 40 mA
I
C
= 40 mA
I
C
= 2 mA
I
E
= 0.5 mA
V
CE
= 20 V
V
CB
= 20 V
T
C
= 25 C
O
TEST CONDITIONS
R
BE
= 10
MINIMUM TYPICAL MAXIMUM
24
50
45
3.5
UNITS
V
V
V
V
I
C
= 250 mA
f = 1.0 MHz
20
150
10
---
pF
dB
V
CE
= 25 V
I
C
= 250 mA
P
REF
= 0.5 W
F = 860 MHz
Vision = -8.0 dB Sound = -7.0 dB Chroma = -16 dB
6.0
7.0
-60
dBc
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1

BLX96 Related Products

BLX96 ASI10784
Description RF Power Bipolar Transistor, Ultra High Frequency Band, Silicon, NPN, RF Power Bipolar Transistor, Ultra High Frequency Band, Silicon, NPN,
Maker Advanced Semiconductor, Inc. Advanced Semiconductor, Inc.
package instruction POST/STUD MOUNT, O-CRPM-F4 POST/STUD MOUNT, O-CRPM-F4
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
Maximum collector current (IC) 1 A 1 A
Collector-based maximum capacity 10 pF 10 pF
Collector-emitter maximum voltage 24 V 24 V
highest frequency band ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND
JESD-30 code O-CRPM-F4 O-CRPM-F4
Number of terminals 4 4
Maximum operating temperature 200 °C 200 °C
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package shape ROUND ROUND
Package form POST/STUD MOUNT POST/STUD MOUNT
Polarity/channel type NPN NPN
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form FLAT FLAT
Terminal location RADIAL RADIAL
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
Base Number Matches 1 1
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