JANS2N2060 datasheet, PDF - EEWORLD Datasheet

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JANS2N2060: DescriptionSmall Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 2-Element, NPN, Silicon, SIMILAR TO TO-77 (TO-99), 6 PIN; CategoryDiscrete semiconductor The transistor; File Size86KB，13 Pages; ManufacturerSemicoa; Websitehttp://www.snscorp.com/Semicoa.htm

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JANS2N2060 Overview

Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 2-Element, NPN, Silicon, SIMILAR TO TO-77 (TO-99), 6 PIN

JANS2N2060 Parametric

Parameter Name	Attribute value
Parts packaging code	TO-99
package instruction	CYLINDRICAL, O-MBCY-W6
Contacts	6
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	0.5 A
Collector-emitter maximum voltage	60 V
Configuration	SEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)	40
JESD-30 code	O-MBCY-W6
Number of components	2
Number of terminals	6
Maximum operating temperature	200 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	NPN
Certification status	Not Qualified
Guideline	MIL-19500/270
surface mount	NO
Terminal form	WIRE
Terminal location	BOTTOM
Transistor component materials	SILICON
Base Number Matches	1

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This is an advance copy of the dated document. The final document from Defense Automated Printing Service may be slightly

different in format due to electronic conversion processes. Actual technical content will be the same.

The documentation and process conversion

measures necessary to comply with this

revision shall be completed by 10 November 1998.

INCH-POUND

MIL-PRF-19500/270G

10 August 1998

SUPERSEDING

MIL-PRF-19500/270F

19 January 1998

PERFORMANCE SPECIFICATION SHEET

SEMICONDUCTOR DEVICE, UNITIZED, DUAL-TRANSISTOR, NPN,

SILICON, TYPES 2N2060 AND 2N2060L

JAN, JANTX, JANTXV, AND JANS

This specification is approved for use by all Depart-

ments and Agencies of the Department of Defense.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for two electrically isolated, matched NPN, silicon transistors as

one dual unit. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

1.2 Physical dimensions. See figure 1 (similar to TO-77 or TO-99).

1.3 Maximum ratings.

= +25

One

section

Both

sections

= +25

One

section

Both

sections

CBO

CEO

EBO

STG

and T

mA dc

V dc

-65 to +200

540

600

1.5

2.12

500

100

1/ For T

> +25

C, derate linearly 3.08 mW/

C one section, 3.48 mW/

C both sections.

2/ For T

> +25

C, derate linearly 8.6 mW/

C one section, 12.1 mW/

C both sections.

1.4 Primary electrical characteristics at T

= +25

FE1

Limit

= 5 V dc

= 10

A dc

FE2

FE3

FE4

| h

CE(sat)

BE(sat)

= 5 V dc

= 100

A dc

= 5 V dc

= 1 mA dc

= 5 V dc

= 10 mA dc

= 10 V dc

= 50 mA dc

f = 20 MHz

= 50 mA dc

= 5 mA dc

= 50 mA dc

= 5 mA dc

V dc

Min

Max

1/ Pulsed (see 4.5.1).0

120

150

0.3

V dc

0.9

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this

document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAT, 3990 East Broad

Street, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing

at the end of this document or by letter.

AMSC N/A

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

FSC 5961

JANS2N2060 Related Products

	JANS2N2060	JANTX2N2060L	JANTXV2N2060L	JANS2N2060L	JAN2N2060L
Description	Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 2-Element, NPN, Silicon, SIMILAR TO TO-77 (TO-99), 6 PIN	Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 2-Element, NPN, Silicon, SIMILAR TO TO-77 (TO-99), 6 PIN	Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 2-Element, NPN, Silicon, SIMILAR TO TO-77 (TO-99), 6 PIN	Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 2-Element, NPN, Silicon, SIMILAR TO TO-77 (TO-99), 6 PIN	Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 2-Element, NPN, Silicon, SIMILAR TO TO-77 (TO-99), 6 PIN
Parts packaging code	TO-99	TO-99	TO-99	TO-99	TO-99
package instruction	CYLINDRICAL, O-MBCY-W6	CYLINDRICAL, O-MBCY-W6	CYLINDRICAL, O-MBCY-W6	CYLINDRICAL, O-MBCY-W6	CYLINDRICAL, O-MBCY-W6
Contacts	6	6	6	6	6
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99
Maximum collector current (IC)	0.5 A	0.5 A	0.5 A	0.5 A	0.5 A
Collector-emitter maximum voltage	60 V	60 V	60 V	60 V	60 V
Configuration	SEPARATE, 2 ELEMENTS	SEPARATE, 2 ELEMENTS	SEPARATE, 2 ELEMENTS	SEPARATE, 2 ELEMENTS	SEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)	40	40	40	40	40
JESD-30 code	O-MBCY-W6	O-MBCY-W6	O-MBCY-W6	O-MBCY-W6	O-MBCY-W6
Number of components	2	2	2	2	2
Number of terminals	6	6	6	6	6
Maximum operating temperature	200 °C	200 °C	200 °C	200 °C	200 °C
Package body material	METAL	METAL	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	NPN	NPN	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Guideline	MIL-19500/270	MIL-19500/270	MIL-19500/270	MIL-19500/270	MIL-19500/270
surface mount	NO	NO	NO	NO	NO
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON
Base Number Matches	1	1	1	1	1

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