M54HC365
RAD-HARD HEX BUS BUFFER
WITH 3 STATE OUTPUTS (NON INVERTING)
s
s
s
s
s
s
s
s
s
s
s
HIGH SPEED:
t
PD
= 10ns (TYP.) at V
CC
= 6V
LOW POWER DISSIPATION:
I
CC
= 4µA(MAX.) at T
A
=25°C
HIGH NOISE IMMUNITY:
V
NIH
= V
NIL
= 28% V
CC
(MIN.)
SYMMETRICAL OUTPUT IMPEDANCE:
|I
OH
| = I
OL
= 6mA (MIN)
BALANCED PROPAGATION DELAYS:
t
PLH
≅
t
PHL
WIDE OPERATING VOLTAGE RANGE:
V
CC
(OPR) = 2V to 6V
PIN AND FUNCTION COMPATIBLE WITH
54 SERIES 365
SPACE GRADE-1: ESA SCC QUALIFIED
50 krad QUALIFIED, 100 krad AVAILABLE ON
REQUEST
NO SEL UNDER HIGH LET HEAVY IONS
IRRADIATION
DEVICE FULLY COMPLIANT WITH
SCC-9401-052
DILC-16
FPC-16
ORDER CODES
PACKAGE
DILC
FPC
FM
M54HC365D
M54HC365K
EM
M54HC365D1
M54HC365K1
DESCRIPTION
The 54HC365 is an advanced high-speed CMOS
HEX BUS BUFFER (3-STATE) fabricated with
silicon gate C
2
MOS technology.
All six buffers are controlled by the combination of
two enable inputs (G1 and G2); all outputs of
these buffers are enabled only when both G1 and
G2 inputs are held low, under all other conditions
these outputs are disabled in a high-impedance
state.
The M54HC365 has non inverting outputs.
All inputs are equipped with protection circuits
against static discharge and transient excess
voltage.
PIN CONNECTION
May 2004
Rev. 1
1/11
M54HC365
Table 3: Absolute Maximum Ratings
Symbol
V
CC
V
I
V
O
I
IK
I
OK
I
O
P
D
T
stg
T
L
Supply Voltage
DC Input Voltage
DC Output Voltage
DC Input Diode Current
DC Output Diode Current
DC Output Current
Power Dissipation
Storage Temperature
Lead Temperature (10 sec)
Parameter
Value
-0.5 to +7
-0.5 to V
CC
+ 0.5
-0.5 to V
CC
+ 0.5
±
20
±
20
±
35
±
70
420
-65 to +150
265
Unit
V
V
V
mA
mA
mA
mA
mW
°C
°C
I
CC
or I
GND
DC V
CC
or Ground Current
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
Table 4: Recommended Operating Conditions
Symbol
V
CC
V
I
V
O
T
op
t
r
, t
f
Supply Voltage
Input Voltage
Output Voltage
Operating Temperature
Input Rise and Fall Time
V
CC
= 2.0V
V
CC
= 4.5V
V
CC
= 6.0V
Parameter
Value
2 to 6
0 to V
CC
0 to V
CC
-55 to 125
0 to 1000
0 to 500
0 to 400
Unit
V
V
V
°C
ns
ns
ns
3/11
M54HC365
Table 6: AC Electrical Characteristics
(C
L
= 50 pF, Input t
r
= t
f
= 6ns)
Test Condition
Symbol
Parameter
V
CC
(V)
2.0
4.5
6.0
2.0
4.5
6.0
2.0
4.5
6.0
2.0
4.5
6.0
2.0
4.5
6.0
2.0
4.5
6.0
C
L
(pF)
T
A
= 25°C
Min.
Typ.
25
7
6
38
12
10
51
17
14
64
16
14
76
19
16
42
18
15
Max.
60
12
10
90
18
15
130
26
22
130
26
22
150
30
26
130
26
22
Value
-40 to 85°C
Min.
Max.
75
19
13
115
23
20
165
33
28
165
33
28
190
38
32
165
33
28
-55 to 125°C
Min.
Max.
90
18
15
135
27
23
195
39
33
195
39
33
225
45
38
195
39
33
ns
Unit
t
TLH
t
THL
Output Transition
Time
t
PLH
t
PHL
Propagation Delay
Time
50
50
ns
150
ns
t
PZL
t
PZH
High Impedance
Output Enable
Time
50
R
L
= 1 KΩ
ns
150
R
L
= 1 KΩ
ns
t
PLZ
t
PHZ
High Impedance
Output Disable
Time
50
R
L
= 1 KΩ
ns
Table 7: Capacitive Characteristics
Test Condition
Symbol
Parameter
V
CC
(V)
5.0
5.0
T
A
= 25°C
Min.
Typ.
5
27
Max.
10
Value
-40 to 85°C
Min.
Max.
10
-55 to 125°C
Min.
Max.
10
pF
pF
Unit
C
IN
C
PD
Input Capacitance
Power Dissipation
Capacitance (note
1)
1) C
PD
is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
CC(opr)
= C
PD
x V
CC
x f
IN
+ I
CC
/6 (per gate)
5/11
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