ASG304
DC-2000 MHz SiGe HBT Amplifier
Features
·SiGe
Technology
·18
dB Gain at 900 MHz
·+24
dBm P1dB
·+41
dBm Output IP3
·2.6
dB Noise Figure
·MTTF
> 100 Years
·Single
+6 V Supply
·SOT-89
Surface Mount Package
Description
The ASG304 is designed for high linearity, high
gain, and low noise over a wide range of fre-
quency, being suitable for use in both receiver
and transmitter of wireless and wireline telecom-
munication systems. The product is manufactured
using a state-of-the-art SiGe HBT process of the
company's own, making it cost-effective and
highly reliable. The amplifiers are available in a
low cost SOT-89 package completing stringent
DC and RF tests.
Package Style: SOT-89
Specifications
1)
Parameters
Frequency Range
Gain
Input VSWR
Output IP3
3)
2)
2)
Applications
Units
MHz
dB
-
-
dBm
dB
dBm
mA
V
4)
Min.
Typ.
250 - 2000
Max.
·CDMA,
GSM, W-CDMA, PCS
·PA
Driver Amplifier
·Gain
Block
·CATV
Amplifier
·IF
Amplifier
17.5
18
1.2
1.7
Output VSWR
Noise Figure
Output P1dB
39
41
2.6
24
110
6
32
45
Supply Current
Supply Voltage
Thermal Resistance, R
th
More Information
Tel: (82) 42-528-7220
Fax: (82) 42-528-7222
ASB, Inc., 4 FI. Venture Town Bldg.,
367-17 Goijeong-Dong, Seo-Gu,
Daejon 302-716, Korea
th
°C/W
1) Measurement conditions are as follows: T = 25°C, V
CC
= 6 V, Freq. = 900 MHz, 50 ohm system.
2) S11 & S22 can be improved, at a specific frequency, by moving an input shunt capacitor (C2) along an input transmission line.
3) OIP3 is measured with two tones at an output power of +8 dBm/tone separated by 1 MHz.
4) The thermal resistance was determined at a DC power of 0.834 W (V
CC
=6 V, I
C
=139 mA) with RF signal and a lead temperature of
85.2
°C.
Absolute Maximum Ratings
Parameters
Operating Case Temperature
Storage Temperature
Supply Voltage
Operating Junction Temperature
Input RF Power (continuous)
1)
Rating
-40 to
+
85°C
-40 to
+
150°C
8V
150°C
+3 dB above Input P1dB
1)
Remarks
1) Contact us for detailed information about a higher input power operation.
Application Notes
Application Circuit for 950 MHz (GSM)
Application Circuit for 1750 MHz
Application Circuit for 2250-2750 MHz
Application Circuit for 900 MHz (5 V)
Ordering Information
Part Number
ASG304
EB-ASG304-900
EB-ASG304-2000
EB-ASG304-1750
EB-ASG304-IF
EB-ASG304-CATV
Description
High linearity medium power amplifier
(Available in tape and reel)
Fully assembled evaluation kit (900 MHz)
Fully assembled evaluation kit (2000 MHz)
Fully assembled evaluation kit (1750 MHz)
Fully assembled evaluation kit (10-200 MHz)
Fully assembled evaluation kit (50-860 MHz)
1/8
www.ASB.co.kr
June
2003
ASG304
Application Circuit: 900 MHz
Typical Performance
Frequency
Magnitude S21
Magnitude S11
Magnitude S22
Output P1dB
Output IP3
2)
1)
1)
Schematic
900 MHz
18 dB
-24 dB
-11 dB
24 dBm
41 dBm
2.6 dB
6V
110 mA
RF IN
C2=8 pF
R1=7.5 kΩ
C1=10 pF
L1=100 nH
Vcc=6 V
C4=
C5=
C6=
100 pF 1000 pF 0.1µF
50
Ω
3 mm
ASG304
C3=100 pF
RF OUT
Noise Figure
Supply Voltage
Current
1) S11 & S22 can be improved, at a specific frequency, by moving
an input shunt capacitor (C2) along an input transmission line.
2) OIP3 is measured with two tones at an output power of +8 dBm/tone
separated by 1 MHz.
2
Board Layout (FR4, 40x40 mm , 0.8T)
Gain vs. Temperature
20
19
Gain (dB)
18
17
Frequency=900 MHz
16
-60
-1 5
-2 0
-2 5
S12 [dB]
-3 0
85 C
-3 5
o
o
25 C
-40 C
o
-40
-20
0
20
o
40
60
80
100
-4 0
6 00
7 00
80 0
90 0
100 0
11 00
1 200
Freq
uenc y [MHz ]
Temperature ( C)
S-parameters
10
-15
0
-20
-10
S11 (dB)
-25
-20
-30
85 C
o
25 C
o
-40 C
o
S12 (dB)
-30
-40
-35
85 C
o
25 C
o
-40 C
o
-50
600
700
800
900
1000
1100
1200
-40
600
700
800
900
1000
1100
1200
Frequency (MHz)
Frequency (MHz)
25
5
20
0
15
-5
S21 (dB)
10
S22 (dB)
5
85 C
o
25 C
o
-40 C
o
-10
-15
85 C
o
25 C
o
-40 C
o
0
600
700
800
900
1000
1100
1200
-20
600
700
800
900
1000
1100
1200
Frequency (MHz)
Frequency (MHz)
3/8
www.ASB.co.kr
June
2003
ASG304
P1dB vs. Frequency
30
Output IP3 vs. Frequency (Pout per tone = 8 dBm)
60
28
85 C
o
25 C
o
-40 C
o
55
50
85 C
o
25 C
o
-40 C
o
Output IP3 (dBm)
P1dB (dBm)
26
45
40
35
30
25
24
22
20
800
825
850
875
900
925
950
20
800
825
850
875
900
925
950
Frequency (MHz)
Frequency (MHz)
Output IP3 vs. Tone Power (Frequency = 900 MHz)
60
55
50
880 MHz Adjacent Channel Power vs. Channel Output Power
IS-95, 9 Channels Forward
-20
-25
Adjacent Channel Power (dBc)
85 C
o
25 C
o
-40 C
o
-30
-35
-40
-45
-50
-55
-60
-65
-70
-75
-80
-85
4
6
Output IP3 (dBm)
85 C
o
25 C
o
-40 C
o
45
40
35
30
25
20
8
9
10
11
12
13
14
15
16
8
10
12
14
16
18
20
P
out
per tone (dBm)
Channel Output Power (dBm)
4/8
www.ASB.co.kr
June
2003
ASG304
Application Circuit: 2000 MHz
Typical Performance
Frequency
Magnitude S21
Magnitude S11
Magnitude S22
Output P1dB
Output IP3
2)
1)
1)
Schematic
2000 MHz
10.5 dB
-20 dB
-15 dB
24 dBm
40 dBm
3.5 dB
6V
110 mA
5 mm
RF IN
L2=3.3 nH
C1=10 pF
ASG304
C2=2.7 pF
GND
R1=7.5 kΩ
L1=56 nH
Vcc=6 V
C4=
100 pF
C5=
1000 pF
C6=
0.1
µF
50
Ω
8.75 mm
C3=5 pF
RF OUT
Noise Figure
Supply Voltage
Current
1) S11 & S22 can be improved, at a specific frequency, by moving
an input shunt capacitor (C2) and inductor (L2) along an input transmission line.
2) OIP3 is measured with two tones at an output power of +8 dBm/tone
separated by 1 MHz.
Gain vs. Temperature
14
Board Layout (FR4, 40x40 mm
2
, 0.8T)
13
Gain (dB)
12
11
Frequency=2 GHz
10
-60
-40
-20
0
20
o
40
60
80
100
Temperature ( C)
S-parameters
20
-10
0
85 C
o
25 C
o
-40 C
o
-15
85 C
o
25 C
o
-40 C
o
S11 (dB)
S12 (dB)
-20
-20
-40
-25
-60
1800
1900
2000
2100
2200
-30
1800
1900
2000
2100
2200
Frequency (MHz)
20
Frequency (MHz)
10
15
85 C
o
25 C
o
-40 C
o
0
85 C
o
25 C
o
-40 C
o
S21 (dB)
S22 (dB)
10
-10
5
-20
0
1800
1900
2000
2100
2200
-30
1800
1900
2000
2100
2200
Frequency (MHz)
Frequency (MHz)
5/8
www.ASB.co.kr
June
2003
51mcu
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