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BSV52R

Description
Small Signal Bipolar Transistor, 0.1A I(C), 12V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size32KB,1 Pages
ManufacturerDiodes Incorporated
Download Datasheet Parametric Compare View All

BSV52R Overview

Small Signal Bipolar Transistor, 0.1A I(C), 12V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN

BSV52R Parametric

Parameter NameAttribute value
Parts packaging codeSOT-23
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage12 V
ConfigurationSINGLE
Minimum DC current gain (hFE)25
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)500 MHz
Maximum off time (toff)18 ns
Maximum opening time (tons)12 ns
Base Number Matches1

BSV52R Related Products

BSV52R BSV52
Description Small Signal Bipolar Transistor, 0.1A I(C), 12V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN Small Signal Bipolar Transistor, 0.1A I(C), 12V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN
Parts packaging code SOT-23 SOT-23
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Contacts 3 3
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
Maximum collector current (IC) 0.1 A 0.1 A
Collector-emitter maximum voltage 12 V 12 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 25 25
JESD-30 code R-PDSO-G3 R-PDSO-G3
Number of components 1 1
Number of terminals 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Polarity/channel type NPN NPN
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 500 MHz 500 MHz
Maximum off time (toff) 18 ns 18 ns
Maximum opening time (tons) 12 ns 12 ns
Base Number Matches 1 1
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