IS62VV25616LL
256K x 16 LOW VOLTAGE, 1.8V ULTRA
LOW POWER CMOS STATIC RAM
FEATURES
• High-speed access time: 70, 85, ns
• CMOS low power operation
– 36 mW (typical) operating
– 9 µW (typical) CMOS standby
• Single 1.7V- 2.25 V
DD
power supply
• Fully static operation: no clock or refresh
required
• Three state outputs
• Data control for upper and lower bytes
• Industrial temperature available
• Available in the 44-pin TSOP (Type II) and
48-pin mini BGA (7.2mm x 8.7mm)
ISSI
AUGUST 2002
®
DESCRIPTION
The
ISSI
IS62VV25616LL is a high-speed, 4,194,304 bit
static RAMs organized as 262,144 words by 16 bits. They
are fabricated using
ISSI
's high-performance CMOS
technology. This highly reliable process coupled with
innovative circuit design techniques, yields high-
performance and low power consumption devices.
For the IS62VV25616LL, when
CE
is HIGH (deselected)
or
CE
is low and both
LB
and
UB
are HIGH, the device
assumes a standby mode at which the power dissipation
can be reduced down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs,
CE
and
OE.
The active LOW
Write Enable (WE) controls both writing and reading of the
memory. A data byte allows Upper Byte (UB) and Lower
Byte (LB) access.
The IS62VV25616LL is packaged in the JEDEC standard
44-pin TSOP (Type II) and 48-pin mini BGA (7.2mm x 8.7mm).
FUNCTIONAL BLOCK DIAGRAM
A0-A17
DECODER
256K x 16
MEMORY ARRAY
V
DD
GND
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
I/O
DATA
CIRCUIT
COLUMN I/O
CE
OE
WE
UB
LB
CONTROL
CIRCUIT
Copyright © 2002 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability
arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any
published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. B
08/07/02
1
IS62VV25616LL
OPERATING RANGE
Range
Commercial
Industrial
Ambient Temperature
0°C to +70°C
–40°C to +85°C
V
DD
1.7V - 2.25V
1.7V - 2.25V
ISSI
®
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
TERM
V
DD
T
STG
P
T
Parameter
Terminal Voltage with Respect to GND
Vdd Related to GND
Storage Temperature
Power Dissipation
Value
–0.2 to V
DD
+0.25
–0.2 to +2.5
–65 to +150
1.0
Unit
V
V
°C
W
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at these or any other conditions above those indicated in the
operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods
may affect reliability.
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
Symbol
V
OH
V
OL
V
IH
V
IL(1)
I
LI
I
LO
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage
Output Leakage
GND
≤
V
IN
≤
V
DD
GND
≤
V
OUT
≤
V
DD
, Outputs Disabled
Test Conditions
I
OH
= -0.1 mA
I
OL
= 0.1 mA
Min.
1.4
—
1.4
–0.3
–1
–1
Max.
—
0.2
V
DD
+ 0.2
0.4
1
1
Unit
V
V
V
V
µA
µA
Notes:
1. V
IL
(min.) = –1.0V for pulse width less than 10 ns.
CAPACITANCE
(1)
Symbol
C
IN
C
OUT
Parameter
Input Capacitance
Input/Output Capacitance
Conditions
V
IN
= 0V
V
OUT
= 0V
Max.
8
10
Unit
pF
pF
Note:
1. Tested initially and after any design or process changes that may affect these parameters.
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. B
08/07/02
3
IS62VV25616LL
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
Symbol
I
CC
I
CC
1
I
SB
1
Parameter
Test Conditions
Com.
Ind.
Com.
Ind.
Com.
Ind.
-70
Min. Max.
—
—
—
—
—
—
30
35
3
3
0.3
0.3
ISSI
-85
Min. Max.
—
—
—
—
—
—
30
35
3
3
0.3
0.3
®
Unit
mA
mA
mA
Vdd Dynamic Operating V
DD
= Max.,
Supply Current
I
OUT
= 0 mA, f = f
MAX
Operating Supply
Current
TTL Standby Current
(TTL Inputs)
OR
ULB Control
V
DD
= Max.,
I
OUT
= 0 mA, f = 1 MH
Z
V
DD
= Max.,
V
IN
= V
IH
or V
IL
CE
≥
V
IH
, f = 0
Vdd = Max., V
IN
= V
IH
or V
IL
CE
= V
IL
, f = 0,
UB
= V
IH
,
LB
= V
IH
I
SB
2
CMOS Standby
V
DD
= 1.95V.,
Current (CMOS Inputs)
CE
≥
V
DD
– 0.2V,
V
IN
≥
V
DD
– 0.2V, or
V
IN
≤
0.2V, f = 0
OR
ULB Control
V
DD
= 1.95V.,
CE
= V
IL
Com.
Ind.
—
—
10
10
—
—
10
10
µA
V
IN
≤
0.2V, f = 0;
UB
/
LB
= V
DD
– 0.2V
Note:
1. At f = f
MAX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
READ CYCLE SWITCHING CHARACTERISTICS
(1)
(Over Operating Range)
Symbol
Parameter
Read Cycle Time
Address Access Time
Output Hold Time
CE
Access Time
OE
Access Time
OE
to High-Z Output
OE
to Low-Z Output
CE
to High-Z Output
CE
to Low-Z Output
LB, UB
Access Time
LB, UB
to High-Z Output
LB, UB
to Low-Z Output
-70
Min.
Max.
70
—
10
—
—
—
5
0
10
—
0
0
—
70
—
70
35
25
—
25
—
70
25
—
-85
Min.
Max.
85
—
10
—
—
—
5
0
10
—
0
0
—
85
—
85
40
25
—
25
—
85
25
—
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
t
RC
t
AA
t
OHA
t
ACE
t
DOE
t
HZOE
(2)
t
LZOE
(2)
t
HZCE
(2)
t
LZCE
(2)
t
BA
t
HZB
t
LZB
Notes:
1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 0.9V, input pulse levels of 0.4 to 1.4V and
output loading specified in Figure 1.
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. B
08/07/02
5
Microcontroller MCU
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