31GF4
Vishay Semiconductors
Ultrafast Plastic Rectifier
Major Ratings and Characteristics
I
F(AV)
V
RRM
I
FSM
t
rr
V
F
T
j
max.
3.0 A
400 V
60 A
30 ns
1.25 V
150 °C
DO-201AD
Features
•
•
•
•
•
•
Glass passivated chip junction
Ultrafast reverse recovery time
Low forward voltage drop
Low switching losses, high efficiency
High forward surge capability
Solder Dip 260 °C, 40 seconds
Typical Applications
For use in high frequency rectification and freewheel-
ing application in switching mode converters and
inverters for consumer, computer and Telecommuni-
cation
Mechanical Data
Case:
DO-201AD
Epoxy meets UL-94V-0 Flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade
Polarity:
Color band denotes cathode end
Maximum Ratings
T
A
= 25 °C unless otherwise specified
Parameter
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current,
0.375" (9.5 mm) lead length
with FIN
w/o FIN/PCB
Symbol
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
T
J
, T
STG
E
AR
Value
400
280
400
3.0
1.5
60
- 40 to + 150
10
Unit
V
V
V
A
A
°C
mJ
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Operating junction and storage temperature range
Reverse Avalanche Energy (8/20 µs surge)
Document Number 88529
21-Jul-05
www.vishay.com
1
31GF4
Vishay Semiconductors
Electrical Characteristics
T
A
= 25 °C unless otherwise specified
Parameter
Minimum reverse breakdown
voltage
Maximum instantaneous
forward voltage
Maximum DC reverse current
at rated DC blocking voltage
Maximum reverse recovery
time
at I
F
= 0.5 A, I
R
= 1.0 A,
I
rr
= 0.25 A
Test condition
at 10 µA
at 3.0 A
(1)
Symbol
V
(BR)
V
F
I
R
t
rr
Value
400
1.25
20
30
Unit
V
V
µA
ns
Thermal Characteristics
T
A
= 25 °C unless otherwise specified
Parameter
Typical thermal resistance
(1)
Junction-to-ambient
Symbol
R
θJA
Value
80
Unit
°C/W
Notes:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
Ratings and Characteristics Curves
(T
A
= 25
°C
unless otherwise noted)
3.5
100
Average Forward Rectified Current (A)
3.0
2.5
2.0
1.5
1.0
0.5
0
0
25
50
75
100
125
150
175
Peak Forward Surge Current (A)
80
60
40
20
0
1
10
100
Lead Temperature (°C)
Number of Cycles at 60H
Z
Figure 1. Maximum Forward Current Derating Curve
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
www.vishay.com
2
Document Number 88529
21-Jul-05
31GF4
Vishay Semiconductors
1,000
1000
T
J
= 150°C
Instantaneous Reverse Current (μA)
10
1
T
J
= 100 °C
Junction Capacitance (pF)
60
80
100
100
100
0.1
T
J
= 25 °C
10
0.01
0.001
0
20
40
1
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
Reverse Voltage (V)
Figure 3. Typical Reverse Characteristics
Figure 5. Typical Junction Capacitance
100
Instantaneous Forward Current (A)
T
J
= 150 °C
10
T
J
= 100 °C
1
T
J
= 25 °C
0.1
0.01
0.0
0.4
0.8
1.2
1.6
2.0
Instantaneous Forward Voltage (V)
Figure 4. Typical Instantaneous Forward Characteristics
Package outline dimensions in inches (millimeters)
DO-201AD
1.0 (25.4)
Min.
0.210 (5.3)
0.190 (4.8)
Dia.
0.375 (9.5)
0.285 (7.2)
1.0 (25.4)
Min.
0.052 (1.32)
0.048 (1.22)
Dia.
Document Number 88529
21-Jul-05
www.vishay.com
3
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