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3SK135A-K

Description
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, MINIMOLD PACKAGE-4
CategoryDiscrete semiconductor    The transistor   
File Size174KB,8 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
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3SK135A-K Overview

UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, MINIMOLD PACKAGE-4

3SK135A-K Parametric

Parameter NameAttribute value
Reach Compliance Codeunknown
ConfigurationSINGLE
Minimum drain-source breakdown voltage20 V
Maximum drain current (Abs) (ID)0.025 A
Maximum drain current (ID)0.006 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)0.03 pF
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-PDSO-G4
Number of components1
Number of terminals4
Operating modeDUAL GATE, ENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum power consumption environment0.2 W
Minimum power gain (Gp)16 dB
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1
To our customers,
Old Company Name in Catalogs and Other Documents
On April 1
st
, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas
Electronics Corporation
took over all the business of both
companies.
Therefore, although the old company name remains in this document, it is a valid
Renesas
Electronics document. We appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1
st
, 2010
Renesas Electronics Corporation
Issued by:
Renesas Electronics Corporation
(http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.

3SK135A-K Related Products

3SK135A-K 3SK135A-L 3SK135A
Description UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, MINIMOLD PACKAGE-4 UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, MINIMOLD PACKAGE-4 RF SMALL SIGNAL, FET
Reach Compliance Code unknown unknow compliant
Configuration SINGLE SINGLE SINGLE
Minimum drain-source breakdown voltage 20 V 20 V 20 V
Maximum drain current (Abs) (ID) 0.025 A 0.025 A 0.025 A
Maximum drain current (ID) 0.006 A 0.002 A 0.006 A
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss) 0.03 pF 0.03 pF 0.03 pF
highest frequency band ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND
JESD-30 code R-PDSO-G4 R-PDSO-G4 R-PDSO-G4
Number of components 1 1 1
Number of terminals 4 4 4
Operating mode DUAL GATE, ENHANCEMENT MODE DUAL GATE, ENHANCEMENT MODE DUAL GATE, ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power consumption environment 0.2 W 0.2 W 0.2 W
Minimum power gain (Gp) 16 dB 16 dB 16 dB
surface mount YES YES YES
Terminal form GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON
Base Number Matches 1 1 1

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