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BZT55C4V7-B0L0G

Description
Zener Diode
CategoryDiscrete semiconductor    diode   
File Size232KB,5 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

BZT55C4V7-B0L0G Overview

Zener Diode

BZT55C4V7-B0L0G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTaiwan Semiconductor
Reach Compliance Codecompliant
ECCN codeEAR99
Base Number Matches1
BZT55C2V4 thru BZT55C75
Taiwan Semiconductor
Small Signal Product
5% Tolerance SMD Zener Diode
FEATURES
- Wide zener voltage range selection: 2.4V to 75V
- VZ Tolerance Selection of ±5%
- Moisture sensitivity level 1
- Matte Tin(Sn) lead finish with Nickel(Ni) underplate
- Pb free and RoHS compliant
- All external surfaces are corrosion resistant a
leads are readily solderable
QUADRO Mini-MELF (LS34)
Hermetically Sealed Glass
MECHANICAL DATA
- Case: QUADRO Mini-MELF Package (JEDEC DO-213)
- High temperature soldering guaranteed: 270
o
C/10s
- Polarity: Indicated by cathode band
- Weight: 29 ± 2.5mg
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Power Dissipation
Forward Voltage
I
F
= 10 mA
(Note 1)
Thermal Resistance (Junction to Ambient)
Junction and Storage Temperature Range
SYMBO
P
D
V
F
R
θJA
T
J
, T
STG
VALUE
500
1
500
- 65 to +175
o
UNIT
mW
V
C/W
o
C
Note1: Valid provided that electrodes are kept at ambient temperature
Zener I vs. V Characteristics
V
BR
I
ZK
Z
ZK
I
ZT
V
Z
Z
ZT
I
ZM
V
ZM
: Voltage at I
ZK
: Test current for voltage V
BR
: Dynamic impedance at I
ZK
: Test current for voltage V
Z
: Voltage at current I
ZT
: Dynamic impedance at I
ZT
: Maximum steady state current
: Voltage at I
ZM
Document Number: DS_S1408007
Version: F14
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