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JANTX1N4150-1

Description
Rectifier Diode, 1 Element, 0.3A, 75V V(RRM), Silicon, DO-35, HERMATIC SEALED, GLASS PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size200KB,2 Pages
ManufacturerMACOM
Websitehttp://www.macom.com
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JANTX1N4150-1 Overview

Rectifier Diode, 1 Element, 0.3A, 75V V(RRM), Silicon, DO-35, HERMATIC SEALED, GLASS PACKAGE-2

JANTX1N4150-1 Parametric

Parameter NameAttribute value
package instructionHERMATIC SEALED, GLASS PACKAGE-2
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeDO-35
JESD-30 codeO-LALF-W2
JESD-609 codee0
Number of components1
Number of terminals2
Maximum output current0.3 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Maximum power dissipation0.5 W
Certification statusQualified
GuidelineMIL-19500/231
Maximum repetitive peak reverse voltage75 V
Maximum reverse recovery time0.004 µs
surface mountNO
Terminal surfaceTIN LEAD
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1
Silicon Switching Diodes
1N4150, 1N4150-1 & 1N3600
Features
Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/231
Metallurgically Bonded
Hermetically Sealed
Double Plug Construction
Maximum Ratings
Operating & Storage Temperature: -65°C to +175°C
Operating Current: 300 mA @ TA = +25°C
Derating: 2.0 mA dc/°C Above TL = + 75°C @ L = 3/8”
Surge Current A:
Surge Current B:
2A (pk) tp = 8.3 mS, VRM = 0
4A (pk) tp = 1 us, VRM = 0
Electrical Specifications @ +25 ºC (Unless Otherwise Specified)
VBR
TYPE
Number
IR = 10
μA
V dc
1N3600
1N4150, -1
75
75
V (pk)
50
50
VRWM
IR1
VR = 50 Vdc
TA = 25 °C
μA
dc
0.1
0.1
IR2
VR = 50 Vdc
TA =150°C
μA
dc
100
100
C
IR = 0; f = 1 MHz
ac signal = 50 mV (p-P)
pF
2.5
2.5
Trr
IF = IR = 10 to 100 mA dc
RL = 100
Ω
ns
4.0
4.0
Forward Voltage Limits - All Types
VF1
IF = 1 mA dc
Limits
V dc
minimum
maximum
0.540
0.620
V dc
0.660
0.740
VF2
IF = 10 mA dc
VF3
IF = 50 mA dc
(Pulsed)
V dc
0.760
0.860
VF4
IF = 100 mA dc
(Pulsed)
V dc
0.820
0.920
VF5
IF = 200 mA dc
(Pulsed)
V dc
0.870
1.000
Outline Drawing
LEADED DESIGN DATA
0.080 MAX
2.03 DIA
1.000
MIN
25.400
CASE: Hermetically sealed glass case per MIL-S-19500/231, DO – 35
LEAD MATERIAL: Copper clad steel
LEAD FINISH: Tin / Lead
THERMAL RESISTANCE: (R
ӨJL
): 250 °C/W maximum at L = 0.375 in
THERMAL IMPEDANCE: (Z
ӨJX
): 70 °C/W maximum
POLARITY: Cathode end is banded.
POLARITY
BAND
(CATHODE)
0.175
MAX
4.44
0.018 / 0.022
DIA
0.457 / 0.559
1.000
MIN
25.400
All dimensions in INCH
mm
Revision Date: 2/5/2013
1

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